G.H. Johnson

Radiation-induced soft errors in advanced semiconductor technologies

Elimination of Enhanced Low-Dose-Rate Sensitivity in Linear Bipolar Devices Using Silicon-Carbide Passivation

Basic mechanisms and modeling of single-event upset in digital microelectronics

Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electron or X-ray irradiation

Total ionizing dose effects in MOS oxides and devices

Breakdown of gate oxides during irradiation with heavy ions

Reliability degradation of ultra-thin oxynitride and Al ₂ O ₃ gate dielectric films owing to heavy-ion irradiation

Neutron-induced single event burnout in high voltage electronics

Total ionizing dose effects in bipolar devices and circuits

Precursor ion damage and angular dependence of single event gate rupture in thin oxides

Passivation layers for reduced total dose effects and ELDRS in linear bipolar devices

Thermal-stress effects and enhanced low dose rate sensitivity in linear bipolar ICs

Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression

Radiation Effects in MOS Oxides

Destructive single-event effects in semiconductor devices and ICs

SEGR: A unique failure mode for power MOSFETs in spacecraft

A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

SEGR and SEB in n-channel power MOSFETs

Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application)

Comparison of ionizing-radiation-induced gain degradation in lateral, substrate, and vertical PNP BJTs

Single-event burnout of power bipolar junction transistors