Standout Papers

A new recombination model for device simulation including tunneling 1992 2026 2003 2014 621
  1. A new recombination model for device simulation including tunneling (1992)
    G.A.M. Hurkx, D.B.M. Klaassen et al. IEEE Transactions on Electron Devices

Citation Impact

6 by Nobel laureates 20 from Science/Nature 65 standout
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Works of G.A.M. Hurkx being referenced

A new recombination model for device simulation including tunneling
1992 Standout

Author Peers

Author EEE Materials Chemistry AMPO Last Decade Papers Cites
G.A.M. Hurkx 1208 281 308 48 1.4k
Grégory Rasier 3 10 449
Seyed Shahabeddin Mortazavi‐Jahromi 2 1 27 377
Giang T.T. Phan 90 72 14 19 453
Claudia Passamonti 1 2 23 519
David Kreindler 17 537

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