Citation Impact
Citing Papers
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Direct-bandgap emission from hexagonal Ge and SiGe alloys
2020 Nature
Luminescent metal–organic frameworks
2009 Standout
Nanocrystal Quantum Dots: From Discovery to Modern Development
2021 StandoutNobel
Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology
1999
Defect luminescence of GaN grown by pulsed laser deposition
2001
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Acceptors in undoped GaN studied by transient photoluminescence
2002
Real-Time Observation of Exciton–Phonon Coupling Dynamics in Self-Assembled Hybrid Perovskite Quantum Wells
2017
Electron energy-loss spectroscopy characterization of pyramidal defects in metalorganic vapor-phase epitaxy Mg-doped GaN thin films
2000
Luminescence properties of defects in GaN
2005 Standout
Stress relaxation and critical thickness for misfit dislocation formation in (101¯) and (3031¯) InGaN/GaN heteroepitaxy
2012 StandoutNobel
Two-Dimensional Excitons and Photoluminescence Properties of the Organic/Inorganic (4-FC6H4C2H4NH3)2[PbI4] Nanomaterial
2009
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Intriguing Optoelectronic Properties of Metal Halide Perovskites
2016 Standout
Anisotropy of tensile stresses and cracking in nonbasal plane AlxGa1−xN/GaN heterostructures
2010
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
2007 StandoutNobel
Optical characterization of III-nitrides
2002 StandoutNobel
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions
2009
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2003 StandoutNobel
Unusual luminescence lines in GaN
2003
Misfit dislocation formation via pre-existing threading dislocation glide in (112¯2) semipolar heteroepitaxy
2011 StandoutNobel
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
Electronic Structure and Exciton–Phonon Interaction in Two-Dimensional Colloidal CdSe Nanosheets
2012
Oxygen related recombination defects in Ta3N5 water splitting photoanode
2015
Particulate Photocatalysts for Light-Driven Water Splitting: Mechanisms, Challenges, and Design Strategies
2019 Standout
444.9 nm semipolar (112¯2) laser diode grown on an intentionally stress relaxed InGaN waveguiding layer
2012 StandoutNobel
Optical properties of extended and localized states in m-plane InGaN quantum wells
2013 StandoutNobel
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Understanding TiO2Photocatalysis: Mechanisms and Materials
2014 Standout
Observation of non-basal slip in semipolar InxGa1-xN/GaN heterostructures
2011 StandoutNobel
Enhancement of Perovskite-Based Solar Cells Employing Core–Shell Metal Nanoparticles
2013
Influence of polarity on carrier transport in semipolar (2021¯) and (202¯1) multiple-quantum-well light-emitting diodes
2012 StandoutNobel
High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
2010 StandoutNobel
Evolution of the Single-Nanocrystal Photoluminescence Linewidth with Size and Shell: Implications for Exciton–Phonon Coupling and the Optimization of Spectral Linewidths
2015 StandoutNobel
Photoinduced Charge-Transfer Processes on MOF-5 Nanoparticles: Elucidating Differences between Metal-Organic Frameworks and Semiconductor Metal Oxides
2008
Epitaxial Lateral Overgrowth of GaN
2001
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films
2001
Performance and polarization effects in (112¯2) long wavelength light emitting diodes grown on stress relaxed InGaN buffer layers
2012 StandoutNobel
Blue emission band in compensated GaN:Mg codoped with Si
2003
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Interface engineering of highly efficient perovskite solar cells
2014 StandoutScience
Electrical and optical properties of beryllium-implanted Mg-doped GaN
2002
Long-Range Balanced Electron- and Hole-Transport Lengths in Organic-Inorganic CH 3 NH 3 PbI 3
2013 StandoutScience
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Demonstration of 505 nm laser diodes using wavelength-stable semipolar (2021¯) InGaN/GaN quantum wells
2011 StandoutNobel
Calculations of acceptor ionization energies in GaN
2001
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films
2002
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Electron-Hole Diffusion Lengths Exceeding 1 Micrometer in an Organometal Trihalide Perovskite Absorber
2013 StandoutScience
Progress in the growth of nonpolar gallium nitride
2007 StandoutNobel
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
AlN/air distributed Bragg reflector by GaN sublimation from microcracks of AlN
2012 StandoutNobel
High-power low-droop violet semipolar (303¯1¯) InGaN/GaN light-emitting diodes with thick active layer design
2014 StandoutNobel
High optical polarization ratio from semipolar (202¯1¯) blue-green InGaN/GaN light-emitting diodes
2011 StandoutNobel
Bound excitons in GaN
2001
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures
2012 StandoutNobel
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
2007 StandoutNobel
Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy
2007 StandoutNobel
Engineering Metal Organic Frameworks for Heterogeneous Catalysis
2010 Standout
Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth
1999
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
384 nm laser diode grown on a (202¯1) semipolar relaxed AlGaN buffer layer
2012 StandoutNobel
Controlled Assembly and Anomalous Thermal Expansion of Ultrathin Cesium Lead Bromide Nanoplatelets
2023 StandoutNobel
Influence of high Mg doping on the microstructural and optoelectronic properties of GaN
2002
Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography
2013 StandoutNobel
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Atomic structure of pyramidal defects in Mg-doped GaN
2003
Organic–Inorganic Perovskites: Structural Versatility for Functional Materials Design
2016 Standout
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of G. Nataf being referenced
Temperature quenching of photoluminescence intensities in undoped and doped GaN
1999
High quality ELO-GaN layers on GaN/Al2O3 patterned substrates by halide vapour phase epitaxy
1999
Mg-enhanced lateral overgrowth of GaN on patterned GaN/sapphire substrate by selective Metal Organic Vapor Phase Epitaxy
1998
Semipolar GaN films on patterned r-plane sapphire obtained by wet chemical etching
2010
Lateral overgrowth of high quality GaN layers on GaN/Al2O3 patterned substrates by halide vapour-phase epitaxy
1998
Comparison between Polar (0001) and Semipolar (1122) Nitride Blue–Green Light-Emitting Diodes Grown on c- and m-Plane Sapphire Substrates
2009
Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates
1998
Improved semipolar (112¯2) GaN quality using asymmetric lateral epitaxy
2009
Growth of high quality crack-free AlGaN films on GaN templates using plastic relaxation through buried cracks
2003