G. Guégan

Two-dimensional flexible nanoelectronics

Signal Transmission from Individual Mammalian Nerve Cell to Field‐Effect Transistor

Electron and Ambipolar Transport in Organic Field-Effect Transistors

Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

Light-Driven Molecular Motors:  Stepwise Thermal Helix Inversion during Unidirectional Rotation of Sterically Overcrowded Biphenanthrylidenes

SiC devices: physics and numerical simulation

Influence of Conformation on Conductance of Biphenyl-Dithiol Single-Molecule Contacts

Colloquium: Strong-field phenomena in periodic systems

Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

Atomistic theory of transport in organic and inorganic nanostructures

Fundamentals of Modern VLSI Devices

Successive Oxide Breakdown Statistics: Correlation Effects, Reliability Methodologies, and Their Limits

Device scaling limits of Si MOSFETs and their application dependencies

A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF ₂ pockets

Operation of short-channel depletion-mode MOS devices at liquid-nitrogen temperature

Collapse of MOSFET drain current after soft breakdown and its dependence on the transistor aspect ratio W/L

Impact of technological parameters on non-stationary transport in realistic 50 nm MOSFET technology

Static and low frequency noise characterization in surface- and buried-mode 0.1 μm PMOSFETS

Towards the limits of conventional MOSFETs: case of sub 30 nm NMOS devices