Citation Impact
Citing Papers
Large Free-Standing GaN Substrates by Hydride Vapor Phase Epitaxy and Laser-Induced Liftoff
1999
Congruent melting of gallium nitride at 6 GPa and its application to single-crystal growth
2003 StandoutNobel
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
2011 Standout
Growth and applications of Group III-nitrides
1998
Group III-nitride lasers: a materials perspective
2011 StandoutNobel
Damage-free separation of GaN thin films from sapphire substrates
1998
Growth and laser-assisted liftoff of low dislocation density AlN thin films for deep-UV light-emitting diodes
2004 StandoutNobel
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
2008 StandoutNobel
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2007 Standout
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Comparison of p-Side Down and p-Side Up GaN Light-Emitting Diodes Fabricated by Laser Lift-Off
2003
Micro Cavity Effect in GaN-Based Light-Emitting Diodes Formed by Laser Lift-Off and Etch-Back Technique
2004 StandoutNobel
Laser lift-off technique for freestanding GaN substrate using an In droplet formed by thermal decomposition of GaInN and its application to light-emitting diodes
2014 StandoutNobel
Stacking Faults and Luminescence Property of InGaN Nanowires
2013 StandoutNobel
Ferroelectricity in hafnium oxide thin films
2011 Standout
Separation of Thin GaN from Sapphire by Laser Lift-Off Technique
2011
Extremely Low-Resistivity and High-Carrier-Concentration Si-Doped Al0.05Ga0.95N
2013 StandoutNobel
Electroluminescence efficiency of (1\,0\,\bar{1}\,0) -oriented InGaN-based light-emitting diodes at low temperature
2008 StandoutNobel
Enhancing the Light Extraction Efficiency of Blue Semipolar (1011) Nitride-Based Light Emitting Diodes through Surface Patterning
2009 StandoutNobel
High performance thin-film flip-chip InGaN–GaN light-emitting diodes
2006
Ferroelectric thin films: Review of materials, properties, and applications
2006 Standout
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Freestanding GaN‐substrates and devices
2003
Optical Process for Liftoff of Group III-Nitride Films
1997
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Structural characteristics and lattice parameters of hydride vapor phase epitaxial GaN free-standing quasisubstrates
2004
Atomic arrangement at the AlN/ZrB2 interface
2002 StandoutNobel
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Concentrating Properties of Nitride-Based Solar Cells Using Different Electrodes
2013 StandoutNobel
Improved efficiency of InGaN/GaN-based multiple quantum well solar cells by reducing contact resistance
2012
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Works of G. Groos being referenced
Domain Structure of Poled Ferroelectric (111) PZT (PbZr0.25Ti0.75O3) Films
1998
Optical patterning of GaN films
1996