G. Dewey

Electrochemical exfoliation of 2D materials beyond graphene

Ultrahigh-mobility semiconducting epitaxial graphene on silicon carbide

High-performance 40nm gate length InSb p-channel compressively strained quantum well field effect transistors for low-power (VCC=0.5V) logic applications

Application of high-κ gate dielectrics and metal gate electrodes to enable silicon and non-silicon logic nanotechnology