G. Charitat

Stresses and silicon interstitials during the oxidation of a silicon substrate

Point defects and dopant diffusion in silicon

Point-defect generation during oxidation of silicon in dry oxygen. I. Theory

Time-dependent diffusivity of boron in silicon oxide and oxynitride

High-κ gate dielectrics: Current status and materials properties considerations

Boron segregation at Si-SiO2 interface during neutral anneals

Stress evolution and point defect generation during oxidation of silicon