Citation Impact
Citing Papers
Electron-electron interactions in the surface inversion layer of a semiconductor
1975 StandoutNobel
Admittance studies of surface quantization in [100]-oriented Si metal-oxide-semiconductor field-effect transistors
1974
Multiferroics: progress and prospects in thin films
2007 Standout
Surface quantum oscillations in (110) and (111) n-type silicon inversion layers
1975 StandoutNobel
Bonding of silicon wafers for silicon-on-insulator
1988 Standout
Observation of Higher Sub-band inn
1975 StandoutNobel
Charge injection in analog MOS switches
1987
On the Electronic g‐Faetor in n‐Type Silicon Inversion Layers
1980 StandoutNobel
A RESONANT-GATE SILICON SURFACE TRANSISTOR WITH HIGH-Q BAND-PASS PROPERTIES
1965
The electrical properties of polycrystalline silicon films
1975 Standout
Resistance fluctuations inG a A s / A l x Ga 1 − x As
1997 StandoutNobel
Quantum oscillations in p-type inversion layers of (111) and (100) silicon field effect transistors
1974 StandoutNobel
Grain-size effects on the ferroelectric behavior of dense nanocrystallineBaTiO 3
2004 Standout
Brownian motors: noisy transport far from equilibrium
2002 Standout
Effects of a Tilted Magnetic Field on a Two-Dimensional Electron Gas
1968
Evidence for a collective ground state in Si inversion layers in the extreme quantum limit
1980 StandoutNobel
Electron and hole mobilities in inversion layers on thermally oxidized silicon surfaces
1965
Halide Perovskite Photovoltaics: Background, Status, and Future Prospects
2019 Standout
New Approaches to Nanofabrication: Molding, Printing, and Other Techniques
2005 Standout
Deep levels within the forbidden gap of silicon-on-sapphire films
1970
Voltage-Tunable Far-Infrared Emission from Si Inversion Layers
1976 StandoutNobel
Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1 f
1984
Infrared Cyclotron Resonance in Semiconducting Surface Inversion Layers
1976 StandoutNobel
Heat-capacity study of two-dimensional electrons in GaAs/Al x Ga 1 − x
1992 StandoutNobel
Electronic states at the silicon-silicon dioxide interface
1977
The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique
1967 Standout
Two-dimensional electrical transport in GaAs-Al x Ga 1 − x As
1980 StandoutNobel
Tunneling‐Assisted Trapping as one of the Possible Mechanisms for the Origin of Hysteresis in Perovskite Solar Cells
2017
MICRO-ELECTRO-MECHANICAL-SYSTEMS (MEMS) AND FLUID FLOWS
1998 Standout
Effect of a parallel magnetic field on surface quantization
1971 StandoutNobel
Growth rate, surface morphology, and defect microstructures of β–SiC films chemically vapor deposited on 6H–SiC substrates
1989 StandoutNobel
Evidence for a phase transition in the fractional quantum Hall effect
1989 StandoutNobel
Valley degeneracy of electrons in accumulation and inversion layers on Si (111) surface
1976 StandoutNobel
Surface quantum oscillations in silicon (100) inversion layers under uniaxial pressure
1978 StandoutNobel
Photoemission of Electrons from Silicon into Silicon Dioxide
1965
Experimental Verification of the Charge Coupled Device Concept
1970 StandoutNobel
Low-frequency 1/f noise in MOSFET’s at low current levels
1977
The growth and structure of semiconducting thin films
1974
Blackbody radiation from hot two-dimensional electrons inAl x Ga 1 − x
1993 StandoutNobel
Analysis of ρxx minima in surface quantum oscillations on (100) n-type silicon inversion layers
1978 StandoutNobel
Nucleation and growth of thin films
1984 Standout
Flicker (1/f) noise in copper films due to radiation-induced defects
1988 StandoutNobel
Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise
1989
Investigation of the reproducibility of electronic properties in n‐type inverted silicon MOSFET surfaces
1979
InAs-AlSb quantum wells in tilted magnetic fields
2000 StandoutNobel
The resonant gate transistor
1967
The preparation and properties of elemental semiconductor thin films
1973
Effective Mass andg
1975 StandoutNobel
Ferroelectric thin films: Review of materials, properties, and applications
2006 Standout
Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes
1971 Standout
Wafer bonding for silicon-on-insulator technologies
1986
Minority carrier lifetime determination from inversion layer transient response
1967
Extrinsic gettering via the controlled introduction of misfit dislocations
1985 StandoutNobel
Transport Properties of Electrons in Inverted Silicon Surfaces
1968
Crystal Structure and the Paraelectric-to-Ferroelectric Phase Transition of Nanoscale BaTiO3
2008 StandoutNobel
Broad Family of Carbon Nanoallotropes: Classification, Chemistry, and Applications of Fullerenes, Carbon Dots, Nanotubes, Graphene, Nanodiamonds, and Combined Superstructures
2015 Standout
CHARGE COUPLED 8-BIT SHIFT REGISTER
1970 StandoutNobel
g-Factor enhancement in the 2D electron gas in GaAs/AlGaAs heterojunctions
1982 StandoutNobel
Surface quantum states in tellurium
1971 StandoutNobel
Surface states at steam-grown silicon-silicon dioxide interfaces
1966
Nobel Lecture: The invention and early history of the CCD
2010 StandoutNobel
The inception of charge-coupled devices
1976 StandoutNobel
Silicon as a mechanical material
1982 Standout
Accumulation- and inversion-layer Hall mobilities in silicon films on sapphire
1973
Hot Electron Effects and Saturation Velocities in Silicon Inversion Layers
1970
The invention and early history of the CCD
2011 StandoutNobel
Critical microstructure for ion-implantation gettering effects in silicon
1977
Past achievements and future challenges in the development of optically transparent electrodes
2012 Standout
EFFECT OF SURFACE STATES ON ELECTRON MOBILITY IN SILICON SURFACE-INVERSION LAYERS
1966
Circuit techniques for reducing the effects of op-amp imperfections: autozeroing, correlated double sampling, and chopper stabilization
1996 Standout
Graphene Versus Carbon Nanotubes in Electronic Devices
2011
Collapse of the Even-Denominator Fractional Quantum Hall Effect in Tilted Fields
1988 StandoutNobel
Theory of the electronic structure of the Si-SiO 2
1980 StandoutNobel
Charge Coupled Semiconductor Devices
1970 StandoutNobel
Electronic properties of two-dimensional systems
1982 Standout
The Properties of Ferroelectric Films at Small Dimensions
2000
Works of F.P. Heiman being referenced
DONOR SURFACE STATES AND BULK ACCEPTOR TRAPS IN SILICON-ON-SAPPHIRE FILMS
1967
Temperature dependence of n-type MOS transistors
1965
The silicon insulated-gate field-effect transistor
1963
Space-Charge Capacitance of an Intrinsic Semiconductor Film
1965
Use of HCl Gettering in Silicon Device Processing
1971
The effects of oxide traps on the MOS capacitance
1965
Thin-film silicon-on-sapphire deep depletion MOS transistors
1966
On the determination of minority carrier lifetime from the transient response of an MOS capacitor
1967