Feng Zhou

A novel approach towards robust construction of physical colors on lithium niobate crystal

Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives

Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode With 600-V/10-A Switching Capability

1.95-kV Beveled-Mesa NiO/β-Ga₂O₃ Heterojunction Diode With 98.5% Conversion Efficiency and Over Million-Times Overvoltage Ruggedness