Standout Papers
Citation Impact
Citing Papers
The effect of molecular structure of organic compound on the direct high‐pressure synthesis of boron‐doped nanodiamond
2016 StandoutNobel
Vacancy–impurity centers in diamond: prospects for synthesis and applications
2016 StandoutNobel
Superconducting nano-mechanical diamond resonators
2014
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Local boron environment in B-doped nanocrystalline diamond films
2012
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Structure and superconductivity of isotope-enriched boron-doped diamond
2008 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Mobility engineering and a metal–insulator transition in monolayer MoS2
2013 Standout
Electrografting: a powerful method for surface modification
2011 Standout
Differences of crystal structure and dynamics between a soft porous nanocrystal and a bulk crystal
2011 StandoutNobel
Complete composition tunability of InGaN nanowires using a combinatorial approach
2007
A scanning superconducting quantum interference device with single electron spin sensitivity
2013
Gate-tunable room-temperature ferromagnetism in two-dimensional Fe3GeTe2
2018 StandoutNature
Electron-Phonon Interaction via Electronic and Lattice Wannier Functions: Superconductivity in Boron-Doped Diamond Reexamined
2007
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Unconventional superconductivity in magic-angle graphene superlattices
2018 StandoutNature
Electron–phonon coupling in hybrid lead halide perovskites
2016 Standout
Type I to type II transition at the interface between random and ordered domains of AlxGa1−xN alloys
2004
Superconductivity in diamond
2009 StandoutNobel
Nanoindentation of epitaxial GaN films
2000
Stiff Diamond/Buckypaper Carbon Hybrids
2014
Boron-rich inclusions and boron distribution in HPHT polycrystalline superconducting diamond
2015 StandoutNobel
Ordered GaInP by atomic layer epitaxy
1991
Optoelectronic devices based on III-V compound semiconductors which have made a major scientific and technological impact in the past 20 years
2000
Current analysis of polyimide passivated InGaP/GaAs HBT
1996
Synthesis of superconducting boron-doped diamond compacts with high elastic moduli and thermal stability
2014 StandoutNobel
Nonlinear macroscopic polarization in III-V nitride alloys
2001
Nanocrystalline diamond
2011
Superconducting Dome in a Gate-Tuned Band Insulator
2012 Science
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
First-principles calculations of gap bowing inIn x Ga 1 − x N In x Al 1 − x N
2002
A comprehensive review of ZnO materials and devices
2005 Standout
Magnetization instabilities at tilted magnetic fields in the quantum Hall regime
1991
Emerging Device Applications for Semiconducting Two-Dimensional Transition Metal Dichalcogenides
2014 Standout
Electron-phonon interactions from first principles
2017 Standout
A reflectance anisotropy spectrometer for real-time measurements
1992
Quantum-Dot Size and Thin-Film Dielectric Constant: Precision Measurement and Disparity with Simple Models
2014 StandoutNobel
Global and Local Superconductivity in Boron‐Doped Granular Diamond
2013 StandoutNobel
Atomic Layer Deposition: An Overview
2009 Standout
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
An insight into what superconducts in polycrystalline boron-doped diamonds based on investigations of microstructure
2008
Multiple quantum well (MQW) waveguide modulators
1988
Gas source molecular beam epitaxy of high quality AlxGa1−xN (0⩽x⩽1) on Si(111)
2001
Metal-to-insulator transition and superconductivity in boron-doped diamond
2007
Electrooptic modulation in polar growth axis InGaAs/GaAs multiple quantum wells
1991 StandoutNobel
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
Quantum sensing
2017 Standout
Role of grain size in superconducting boron-doped nanocrystalline diamond thin films grown by CVD
2011
Time-resolved spectroscopy of (Al,Ga,In)N based quantum wells: Localization effects and effective reduction of internal electric fields
2002
Atomic Layer Epitaxy
1984
Influence of growth medium composition on the incorporation of boron in HPHT diamond
2018 StandoutNobel
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Electrochemical Behaviour of Boron-doped Diamond Compacts – a New Electrode Material
2015 StandoutNobel
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Maximally localized Wannier functions: Theory and applications
2012 Standout
InAs-AlSb quantum wells in tilted magnetic fields
2000 StandoutNobel
GaAs Atomic Layer Epitaxy Using the KrF Excimer Laser
1989
Spatially correlated microstructure and superconductivity in polycrystalline boron-doped diamond
2010
Size-controllable synthesis of ultrasmall diamonds from halogenated adamantanes at high static pressure
2019 StandoutNobel
Optical anisotropy in InAs/AlSb superlattices
1994 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Gap bowing and Stokes shift in InxGa1−xN alloys: First-principles studies
2002
High‐Pressure Synthesis of Boron‐Doped Ultrasmall Diamonds from an Organic Compound
2015 StandoutNobel
Suppression of the Landau-level coincidence: A phase transition in tilted magnetic fields
1993 Nobel
Modelling of thermally detected optical absorption and luminescence of (In,Ga)N/GaN heterostructures
2000
Superconductivity in diamond induced by boron doping at high pressure
2008 StandoutNobel
Broad Family of Carbon Nanoallotropes: Classification, Chemistry, and Applications of Fullerenes, Carbon Dots, Nanotubes, Graphene, Nanodiamonds, and Combined Superstructures
2015 Standout
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Size dependence of nanostructures: Impact of bond order deficiency
2006
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Reflectance anisotropy spectroscopy of oriented films of semiconducting polymers
2000 StandoutNobel
Atomic layer epitaxy of III–V compounds in a hydride vapor phase system
1990
Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films
2007
Growth of AlGaN on Si(111) by gas source molecular beam epitaxy
2000
Dielectric suppression and its effect on photoabsorption of nanometric semiconductors
2001
Boron-doped diamond synthesized at high-pressure and high-temperature with metal catalyst
2016
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1−xN, InxGa1−xN, and InxAl1−xN
2000
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Compositional dependence of the strain-free optical band gap in InxGa1−xN layers
2001
Efficiency of light emission in high aluminum content AlGaN quantum wells
2009
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
Works of F. Omnès being referenced
XPS study of ruthenium tris-bipyridine electrografted from diazonium salt derivative on microcrystalline boron doped diamond
2009
Nanostructures made from superconducting boron-doped diamond
2010
Monolayer epitaxy of III-V compounds by low-pressure metalorganic chemical vapor deposition
1987
I n s i t u investigation of InAs metalorganic chemical vapor deposition growth using reflectance anisotropy
1990
The effect of exciton localization on the optical and electrical properties of undoped and Si-doped AlxGa1−xN
2006
Electron-spin resonance of the two-dimensional electron gas in Ga0.47In0.53As-InP heterostructures
1989
Experimental indications of a BCS behaviour in superconducting diamond
2006
I n s i t u investigation of the low-pressure metalorganic chemical vapor deposition of lattice-mismatched semiconductors using reflectance anisotropy measurements
1990
A high quantum efficiency GaInAs-InP photodetector-on-silicon substrate
1989
Extremely high electron mobility in a GaAs-GaxIn1−xP heterostructure grown by metalorganic chemical vapor deposition
1989
First observation of the two-dimensional properties of the electron gas in Ga0.49In0.51P/GaAs heterojunctions grown by low pressure metalorganic chemical vapor deposition
1986
Nanoindentation on AlGaN thin films
1999
A composite material made of carbon nanotubes partially embedded in a nanocrystalline diamond film
2012
Ordering in undoped hexagonal AlxGa1–xN grown on sapphire (0001) with 0.09 < x < 0.247
2003
Detailed study of superconductivity in nanostructured nanocrystalline boron doped diamond thin films
2010
Intrinsic compensation of silicon-doped AlGaN
2003
Impurity dimers in superconducting B-doped diamond: Experiment and first-principles calculations
2006
Optical investigations of GaAs-GaInP quantum wells and superlattices grown by metalorganic chemical vapor deposition
1991
First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrate
1988
High-quality GaAs/Ga0.49In0.51P superlattices grown on GaAs and silicon substrates by low-pressure metalorganic chemical vapor deposition
1988
The Diamond Superconducting Quantum Interference Device
2011
In situ characterization by reflectance difference spectroscopy of III–V materials and heterojunctions grown by low pressure metal organic chemical vapour deposition
1990
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
1999
Evidence for multiple chemical ordering in AlGaN grown by metalorganic chemical vapor deposition
2001
Indium incorporation above 800 °C during metalorganic vapor phase epitaxy of InGaN
1999
Reflectance anisotropy investigation of the metalorganic chemical-vapor deposition of III-V heterojunctions
1991
Doping-induced anisotropic lattice strain in homoepitaxial heavily boron-doped diamond
2008
Metal-insulator transition and superconductivity in boron-doped diamond
2007
Room-temperature excitons in Ga0.47In0.53As-InP superlattices grown by low-pressure metalorganic chemical vapor deposition
1986
New form of ordering in AlGaN
2001
Conduction- and valence-band offsets in GaAs/Ga0.51In0.49P single quantum wells grown by metalorganic chemical vapor deposition
1990
Spectroscopic Studies of InGaN Ternary Alloys
1999
Very high purity InP epilayer grown by metalorganic chemical vapor deposition
1988
High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition
1990