F. M. Bufler

Two-dimensional flexible nanoelectronics

Negative poisson’s ratio in single-layer black phosphorus

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

Two-dimensional material nanophotonics

Intriguing Optoelectronic Properties of Metal Halide Perovskites

Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors

The Effect of General Strain on the Band Structure and Electron Mobility of Silicon

Recent development of two-dimensional transition metal dichalcogenides and their applications

Recent Advances in Ultrathin Two-Dimensional Nanomaterials

Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission

Simulation of nanoscale MOSFETs using modified drift-diffusion and hydrodynamic models and comparison with Monte Carlo results

Hole transport in strained Si1−xGex alloys on Si1−yGey substrates

Full band Monte Carlo investigation of electron transport in strained Si grown on Si1−xGex substrates

Scaling of strained-si n-MOSFETs into the ballistic regime and associated anisotropic effects

Monte Carlo simulation and measurement of nanoscale n-MOSFETs