Citation Impact
Citing Papers
Acceptor energy level for Zn in Ga1−xAlxAs
1980
Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid-phase epitaxy
1973
Atomistic Origins of High-Performance in Hybrid Halide Perovskite Solar Cells
2014 Standout
Mobility of holes of zinc-blende III–V and II–VI compounds
1974
Observation of Two Charged States of a Nickel-Oxygen Vacancy Pair in SrTiO 3
1969 StandoutNobel
First-principles calculations for point defects in solids
2014 Standout
Ordered quantum-dot arrays in semiconducting matrices
1996 StandoutNobel
Donor and acceptor states in lightly doped polyacetylene,( CH ) x
1979 StandoutNobel
The anodic oxidation of superimposed metallic layers: theory
1980
Activation Energy of Holes in Zn-Doped GaAs
1970
Anomalous temperature effect on the Fe3+cubic crystalline field splitting in KTaO3(EPR study)
1982 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
Microstructural analysis of the Ge/Pd(Zn) ohmic contact to p-InP
1996
The incorporation and characterisation of acceptors in epitaxial GaAs
1975
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
1991 StandoutNobel
Spectroscopy of Excited Acceptor States in GaP
1976
Intriguing Optoelectronic Properties of Metal Halide Perovskites
2016 Standout
The growth and properties of LPE GaAs
1972
Emission Wavelength Dependence of Internal Quantum Efficiency in InGaN Nanowires
2013 StandoutNobel
Polar Mobility of Holes in III-V Compounds
1971
Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windows
1986 Standout
Study of Zn-associated levels in GaN
1992 StandoutNobel
The Monte Carlo method for the solution of charge transport in semiconductors with applications to covalent materials
1983 Standout
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
1986 StandoutNobel
Electric properties of GaN : Zn MIS-type light emitting diode
1993 StandoutNobel
Structural Defects in GaN Epilayers Grown by Gas Source Molecular Beam Epitaxy
1989 StandoutNobel
Valence-band deformation potentials for the III–V compounds
1970
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
GaAs–AlxGa1−xAs Double Heterostructure Injection Lasers
1971
Semiconducting and other major properties of gallium arsenide
1982 Standout
Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
1992 StandoutNobel
Concentration dependence of the absorption coefficient for n− and p−type GaAs between 1.3 and 1.6 eV
1975
Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide
1988 StandoutNobel
JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE
1970
Temperature dependence of the mobility of two-dimensional hole systems in modulation-doped GaAs-(AlGa)As
1984 StandoutNobel
Electron paramagnetic resonance of three manganese centers in reduced SrTiO 3
1977 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO
2004 Standout
Optical properties of anodically grown native oxides on some Ga-V compounds from 1.5 to 6.0 eV
1977
Concentration-dependent absorption and spontaneous emission of heavily doped GaAs
1976
Quantum Cascade Laser
1994 StandoutScience
Ni/Si-Based Ohmic Contacts to p- and n-Type GaN
1997 StandoutNobel
Paramagnetic point and pair defects in oxide perovskites
1981 StandoutNobel
Molecular beam epitaxial growth of GaP on Si
1984 StandoutNobel
Molecular beam epitaxy
1975 Standout
Electron Mobility in Ge, Si, and GaP
1972
Mechanical properties of thin films
1989 Standout
Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
1983 Standout
Photoemission lifetime of a negative electron affinity gallium nitride photocathode
2014 StandoutNobel
Electron Spin Resonance of Iron-Doped KTaO3
1968
Development of a high average current polarized electron source with long cathode operational lifetime
2007
Free-Carrier and Exciton Recombination Radiation in GaAs
1968
Some Observations on the Electrical Characterization of the Heteroepitaxially Grown Cubic SiC
1989
Electrical properties of n-type vapor-grown gallium nitride
1973
Universality aspects of the metal-nonmetal transition in condensed media
1978
Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films
1998 StandoutNobel
Characterization of high purity GaAs grown by molecular beam epitaxy
1982 StandoutNobel
Structure of transition-metal—oxygen-vacancy pair centers
1979 StandoutNobel
Stresses induced in GaAs by TiPt ohmic contacts
1983
Lattice Mobility of Holes in III-V Compounds
1970
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor deposition
2002
Spin relaxation of conduction electrons inAl x Ga 1 − x As
1975
Porous Anodic Aluminum Oxide: Anodization and Templated Synthesis of Functional Nanostructures
2014 Standout
Works of F. Ermanis being referenced
Anodic Oxidation of Gallium Phosphide in Aqueous Hydrogen Peroxide
1974
Germanium-Doped Gallium Arsenide
1970
The combined use of He back-scattering and He-induced X-rays in the study of anodically grown oxide films on GaAs
1973
Electrical Properties of Sn-Doped GaP
1971
The Anodization of GaAs and GaP in Aqueous Solutions
1976
Stress‐Induced Dark Line Defect Formation in GaAlAs : Si LED's
1981
Variation of Electrical Properties with Zn Concentration in GaP
1969
Thermal Ionization Energies of Cd and Zn in GaP
1968
The migration of gold from the p-contact as a source of dark spot defects in InP/InGaAsP LED's
1983
Hall Effect and Resistivity of Zn-Doped GaAs
1966