Citation Impact
Citing Papers
Electronics based on two-dimensional materials
2014 Standout
Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)
1997
Control of strain in GaN using an In doping-induced hardening effect
2001 StandoutNobel
Maskless pendeo-epitaxial growth of GaN films
2002 StandoutNobel
The ReaxFF reactive force-field: development, applications and future directions
2016 Standout
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
2002 StandoutNobel
Structural defects and microstrain in GaN induced by Mg ion implantation
1998
Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties
2004
Novel activation process for Mg-implanted GaN
2013 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Effects of electric current on solid state phase transformations in metals
2000 Standout
GaN-Based RF Power Devices and Amplifiers
2008 Standout
Dry etch damage in n-type GaN and its recovery by treatment with an N2 plasma
2000
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
1998 StandoutNobel
Recovery of Structural Defects in GaN After Heavy Ion Implantation
1997 StandoutNobel
Defect‐Rich MoS2 Ultrathin Nanosheets with Additional Active Edge Sites for Enhanced Electrocatalytic Hydrogen Evolution
2013 Standout
Reversible Solid-to-Liquid Phase Transition of Coordination Polymer Crystals
2014 StandoutNobel
Electrical activation characteristics of silicon-implanted GaN
2005
Surface modification of titanium, titanium alloys, and related materials for biomedical applications
2004 Standout
Chemical states and electronic structure of a HfO2∕Ge(001) interface
2005
III–nitrides: Growth, characterization, and properties
2000
Kinetics and gas-surface dynamics of GaN homoepitaxial growth using NH3-seeded supersonic molecular beams
2001 StandoutNobel
Gas-source molecular beam epitaxy of III–V nitrides
1997 StandoutNobel
Strain and Dislocation Reduction in Maskless Pendeo-Epitaxy GaN Thin Films
2001 StandoutNobel
Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields
2009 StandoutNobel
A review of the metal–GaN contact technology
1998
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
2002 StandoutNobel
Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors
2008 StandoutScience
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Optical activation of Be implanted into GaN
1998 StandoutNobel
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Measuring the Capacitance of Individual Semiconductor Nanowires for Carrier Mobility Assessment
2007
Lattice Location and Luminescence Behavior of Rare Earth Elements Implanted in GaN
1997 StandoutNobel
Top-gated graphene field-effect-transistors formed by decomposition of SiC
2008
Surface Defects and Passivation of Ge and III–V Interfaces
2009
Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy
2014 StandoutNobel
Rapid Melt Growth of Germanium Crystals with Self-Aligned Microcrucibles on Si Substrates
2005
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Graphene-Based Single-Bacterium Resolution Biodevice and DNA Transistor: Interfacing Graphene Derivatives with Nanoscale and Microscale Biocomponents
2008 Standout
Nonvolatile Switching in Graphene Field-Effect Devices
2008 StandoutNobel
Gallium nitride materials - progress, status, and potential roadblocks
2002 StandoutNobel
Strain Modification of GaN in AlGaN/GaN Epitaxial Films
1999 StandoutNobel
Low-energy electron microscopy observations of GaN homoepitaxy using a supersonic jet source
1999 StandoutNobel
Lattice site location studies of ion implanted Li8 in GaN
1998 StandoutNobel
Hydrothermal Dehydration for the “Green” Reduction of Exfoliated Graphene Oxide to Graphene and Demonstration of Tunable Optical Limiting Properties
2009 Standout
Biaxial strain in AlxGa1−xN/GaN layers deposited on 6H-SiC
1998 StandoutNobel
Trends in semiconductor defect engineering at the nanoscale
2010
Plasma-Immersion Ion Implantation
1996
Band parameters for nitrogen-containing semiconductors
2003 Standout
Ultra-shallow P+/N junctions formed by recoil implantation
1998
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Supersonic jet epitaxy of III-nitride semiconductors
1997
Works of E.C. Jones being referenced
Thermal annealing characteristics of Si and Mg-implanted GaN thin films
1996
Shallow junction doping technologies for ULSI
1998
Electrical characterization of germanium p-channel MOSFETs
2003
Anomalous behavior of shallow BF3 plasma immersion ion implantation
1994
Characteristics of sub-100-nm p/sup +//n junctions fabricated by plasma immersion ion implantation
1993
The influence of nitrogen ion energy on the quality of GaN films grown with molecular beam epitaxy
1995