E. Glaser

Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

A rapid-response humidity sensor based on BaNbO3 nanocrystals

Study of defects in GaN grown by the two-flow metalorganic chemical vapor deposition technique using monoenergetic positron beams

4D visualization of embryonic, structural crystallization by single-pulse microscopy

Crystallization of an amorphous layer in P+-implanted 6H-SiC studied by monoenergetic positron beams

Compression of single-electron pulses with a microwave cavity

Humidity Sensors Principle, Mechanism, and Fabrication Technologies: A Comprehensive Review

Damage production and annealing of ion implanted silicon carbide

Defect production and annealing in ion implanted silicon carbide

Superconducting and anomalous electron transport properties and electronic structure ofBaNbO3−xandBa2Nb5Oxfilms

Explosive crystallization in silicon

High temperature ion implantation of silicon carbide