E. Chartier

Trapping effects in GaN and SiC microwave FETs

Current analysis of polyimide passivated InGaP/GaAs HBT

A comprehensive review of ZnO materials and devices

Demonstration of a 4H SiC betavoltaic cell

GaN-Based RF Power Devices and Amplifiers

Band parameters for III–V compound semiconductors and their alloys

Elimination of current instability and improvement of RF power performance using Si3N4 passivation in SiC lateral epitaxy MESFETs

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

Power Density Comparison between Microwave Power MESFET's Processed on Conductive and Semi-Insulating Wafer

Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs

First microwave characterisation of LP-MOCVD grown GaInP/GaAs self-aligned HBT

Low frequency noise in selfaligned GaInP/GaAs heterojunction bipolar transistor

Characterization of Power MESFETs on 4h-SiC Conductive and Semi-Insulating Wafers