Citation Impact
Citing Papers
Self-assembled growth of catalyst-free GaN wires by metal–organic vapour phase epitaxy
2009
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Precise optical modeling of blue light-emitting diodes by Monte Carlo ray-tracing
2010
Excitation density dependence of radiative and nonradiative recombination lifetimes in InGaN/GaN multiple quantum wells
2014 StandoutNobel
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
2009 Standout
High spatial resolution picosecond cathodoluminescence of InGaN quantum wells
2006
InGaN laser diodes with 50 mW output power emitting at 515 nm
2009
Carrier localization degree of In0.2Ga0.8N/GaN multiple quantum wells grown on vicinal sapphire substrates
2009
Electroluminescence enhancement of ( 11 2 ¯ 2 ) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates
2011 StandoutNobel
Polarization of III-nitride blue and ultraviolet light-emitting diodes
2005
The consequences of high injected carrier densities on carrier localization and efficiency droop in InGaN/GaN quantum well structures
2012
Impact of p-GaN Thermal Damage and Barrier Composition on Semipolar Green Laser Diodes
2014 StandoutNobel
Effects of YAG: Ce Phosphor Particle Size on Luminous Flux and Angular Color Uniformity of Phosphor-Converted White LEDs
2012 Standout
Morphological, structural, and emission characterization of trench defects in InGaN/GaN quantum well structures
2012
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates
2013 StandoutNobel
Semiconductor amplifiers and lasers with tapered gain regions
1996
High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
2010 StandoutNobel
Magnetic switch for integrated atom optics
2001 StandoutNobel
New light from hybrid inorganic–organic emitters
2008
Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (112¯2)-plane GaN
2006 StandoutNobel
Guiding laser-cooled atoms in hollow-core fibers
2000 StandoutNobel
Nickel-Based Superalloys for Advanced Turbine Engines: Chemistry, Microstructure and Properties
2006 Standout
Trench-Shaped Defects on AlGaInN Quantum Wells Grown under Different Growth Pressures
2013 StandoutNobel
Comparison of Polished and Dry Etched Semipolar $(11\bar{2}2)$ III-Nitride Laser Facets
2013 StandoutNobel
Orange–Red Light-Emitting Diodes Based on a Prestrained InGaN–GaN Quantum-Well Epitaxy Structure
2006
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Comparison between Polar (0001) and Semipolar (1122) Nitride Blue–Green Light-Emitting Diodes Grown on c- and m-Plane Sapphire Substrates
2009
Guiding Neutral Atoms Around Curves with Lithographically Patterned Current-Carrying Wires
1999 StandoutNobel
Resonant cavity enhanced photonic devices
1995
Si incorporation and Burstein–Moss shift in n-type GaAs
1999
Strain-Compensated Effect on the Growth of InGaN/AlGaN Multi-Quantum Well by Metalorganic Vapor Phase Epitaxy
2013 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
White light generation with CdSe-ZnS nanocrystals coated on an InGaN-GaN quantum-well blue/Green two-wavelength light-emitting diode
2006
Efficient dipole-dipole coupling of Mott-Wannier and Frenkel excitons in (Ga,In)N quantum well/polyfluorene semiconductor heterostructures
2007
Optical properties of metallic films for vertical-cavity optoelectronic devices
1998 Standout
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Optimization of InGaN/GaN multiple quantum well layers by a two-step varied-barrier-growth temperature method
2008
High-performance broadband optical coatings on InGaN/GaN solar cells for multijunction device integration
2014 StandoutNobel
Optical excitations in electron microscopy
2010 Standout
Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
2013 StandoutNobel
Effect of barrier growth temperature on morphological evolution of green InGaN/GaN multi-quantum well heterostructures
2007
Prestrained effect on the emission properties of InGaN∕GaN quantum-well structures
2006
ZnO Nanostructures for Dye‐Sensitized Solar Cells
2009 Standout
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN
2011 StandoutNobel
Semipolar (2021) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage
2013 StandoutNobel
Dye-sensitized solar cells using ZnO nanotips and Ga-doped ZnO films
2008
Works of E. Armour being referenced
Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire
2003
High-power spatially coherent operation of unstable resonator semiconductor lasers with regrown lens trains
1992
Zinc and tellurium doping in GaAs and AlxGa1−xAs grown by MOCVD
1991
Study of carrier localization in InGaN/GaN quantum well blue-light-emitting diode structures
2006
Advanced characterization studies of sapphire substrate misorientation effects on GaN-based LED device development
2003
Inverting and latching optical logic gates based on the integration of vertical-cavity surface-emitting lasers and photothyristors
1992
Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition
2003
Diffusion-driven and excitation-dependent recombination rate in blue InGaN/GaN quantum well structures
2014
Edge-emitting electroluminescence polarization investigation of InGaN/GaN light-emitting diodes grown by metal-organic chemical vapor deposition on sapphire (0001)
2003
Structural and Optical Properties of ZnO Nanotips Grown on GaN Using Metalorganic Chemical Vapor Deposition
2007
Sapphire substrate misorientation effects on GaN nucleation layer properties
2004
Cascadable, latching photonic switch with high optical gain by the monolithic integration of a vertical-cavity surface-emitting laser and a pn-pn photothyristor
1991