Citation Impact
Citing Papers
The missing memristor found
2008 StandoutNature
High hopes: can molecular electronics realise its potential?
2012 StandoutNobel
Ground‐State Equilibrium Thermodynamics and Switching Kinetics of Bistable [2]Rotaxanes Switched in Solution, Polymer Gels, and Molecular Electronic Devices
2005 StandoutNobel
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
2009 Standout
New insights in the relation between electron trap generation and the statistical properties of oxide breakdown
1998
Negative ion mass spectrometry. New analytical method for detection of trinitrotoluene
1972
Ionizing radiation induced leakage current on ultra-thin gate oxides
1997
Silicon nitride chemical vapor deposition from dichlorosilane and ammonia: theoretical study of surface structures and reaction mechanism
2001 StandoutNobel
The electrical properties of polycrystalline silicon films
1975 Standout
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2001
High dielectric constant oxides
2004 Standout
Atomistic modeling of chemical vapor deposition: silicon nitride CVD from dichlorosilane and ammonia
2000 StandoutNobel
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
1997 StandoutNobel
Electrical characterization of Al/AlOx/molecule/Ti/Al devices
2005
Electrical Properties of Sulfur-Doped Gallium Phosphide
1968 StandoutNobel
Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6H-SiC(0001) and Si(111) Substrates
2001 StandoutNobel
Total ionizing dose effects in MOS oxides and devices
2003 Standout
Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes
2002
Power-Up SRAM State as an Identifying Fingerprint and Source of True Random Numbers
2008 Standout
Comparison of leakage currents in ion-implanted and diffused p-n junctions
1975
Point defects and dopant diffusion in silicon
1989 Standout
Effects of stress on metal-oxide-semiconductor structures
1973
Technique to evaluate the diode ideality factor of light-emitting diodes
2010 StandoutNobel
Thermodynamic Calculations for the Chemical Vapor Deposition of Silicon Nitride
1983 StandoutNobel
The diffusion of antimony in heavily doped and n- and p-type silicon
1986
The structural and luminescence properties of porous silicon
1997 Standout
Influence of Mg Doping on the Morphological, Optical, and Structural Properties of InGaN/GaN Multiple Quantum Wells
2007 StandoutNobel
Percolation models for gate oxide breakdown
1999
Galvanomagnetic Effect for Holes and the Valence Band in (001) Silicon on Sapphire
1979
Soft breakdown of ultra-thin gate oxide layers
1996
SINGLE-CRYSTAL GALLIUM ARSENIDE ON INSULATING SUBSTRATES
1968
Effects ofCo 60
1970
The preparation, characterization and applications of silicon nitride thin films
1980
Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy
1998 StandoutNobel
The growth and structure of semiconducting thin films
1974
Bulk nanostructured thermoelectric materials: current research and future prospects
2009 Standout
Recent development of two-dimensional transition metal dichalcogenides and their applications
2017 Standout
Irradiation-induced defects in GaAs
1985 Standout
Preparation and Properties of Solution-Grown Epitaxial p—n Junctions in GaP
1966
Radiation induced leakage current and stress induced leakage current in ultra-thin gate oxides
1998
A survey of the heteroepitaxial growth of semiconductor films on insulating substrates
1974
Nucleation and growth of thin films
1984 Standout
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Low dielectric constant materials for microelectronics
2003 Standout
Resistive switching in transition metal oxides
2008 Standout
Transparent conductors—A status review
1983 Standout
MOS device modeling at 77 K
1989
Determination of existing stress in silicon films on sapphire substrate using Raman spectroscopy
1980
Molecular beam epitaxy
1975 Standout
Explanation for the oxide thickness dependence of breakdown characteristics of metal-oxide-semiconductor structures
1997
Experimental analysis and theoretical model for anomalously high ideality factors (n≫2.0) in AlGaN/GaN p-n junction diodes
2003
Role of hole fluence in gate oxide breakdown
1999
Surface quantum oscillations in n-type (100) silicon inversion layers on sapphire
1977 StandoutNobel
SOI by CVD: Epitaxial Lateral Overgrowth (ELO) process—Review
1983
A new dielectric isolation method using porous silicon
1981
Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide
2006
Selective vapor-phase deposition on patterned substrates
1990
Fundamentals of Modern VLSI Devices
2009 Standout
Ultrathin gate oxide reliability: physical models, statistics, and characterization
2002
Radiation Effects in MOS Oxides
2008 Standout
Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides
2004 StandoutNobel
High-κ gate dielectrics: Current status and materials properties considerations
2001 Standout
Models of charge transport and transfer in molecular switch tunnel junctions of bistable catenanes and rotaxanes
2006 StandoutNobel
Mechanism for stress-induced leakage currents in thin silicon dioxide films
1995
Instrumentation for trace detection of high explosives
2004 Standout
Hall Mobility in Chemically Deposited Polycrystalline Silicon
1971
Electronic properties of two-dimensional systems
1982 Standout
Nanocrystal metal-oxide-semiconductor memories obtained by chemical vapor deposition of Si nanocrystals
2002
Works of D.J. Dumin being referenced
Selective epitaxy using silane and germane
1971
Carrier Transport in Thin Silicon Films
1968
Autodoping of Silicon Films Grown Epitaxially on Sapphire
1966
Electrically and optically active defects in silicon-on-sapphire films
1968
Deep levels within the forbidden gap of silicon-on-sapphire films
1970
Deformation of and Stress in Epitaxial Silicon Films on Single-Crystal Sapphire
1965
Thickness dependence of stress-induced leakage currents in silicon oxide
1997
Nonuniqueness of time-dependent-dielectric-breakdown distributions
1997
Measurement of Film Thickness Using Infrared Interference
1967
A model relating wearout to breakdown in thin oxides
1994
The charging and discharging of high-voltage stress-generated traps in thin silicon oxide
1996
Correlation of stress-induced leakage current in thin oxides with trap generation inside the oxides
1993
Thin-film silicon: Preparation, properties, and device applications
1969
Hydride Sources for Diffusion of Dopants into Silicon-on-Sapphire Films
1969
High field related thin oxide wearout and breakdown
1995
Traps in Reoxidized Nitrided Oxides of Varying Thicknesses
1995
Properties of Gallium Arsenide Diodes between 4.2° and 300°K
1965
Defect generation in silicon
1971
Ballistic transport and properties of submicrometer Silicon MOSFET's from 300 to 4.2 K
1986
The Deposition of Silicon on Single-Crystal Spinel Substrates
1968
Temperature Dependence of the Hall Mobility and Carrier Concentration in Silicon-on-Sapphire Films
1970
Epitaxial Growth of Germanium on Single Crystal Spinel
1967