Dennis Lin

Electronics based on two-dimensional materials

The ReaxFF reactive force-field: development, applications and future directions

Forward Bias Gate Breakdown Mechanism in Enhancement-Mode p-GaN Gate AlGaN/GaN High-Electron Mobility Transistors

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

Effective Mobility Enhancement in Al₂O₃/InSb/Si Quantum Well Metal Oxide Semiconductor Field Effect Transistors for Thin InSb Channel Layers

GaN-on-Si Power Technology: Devices and Applications

<italic>In Situ</italic> Process Control of Trilayer Gate-Stacks on p-Germanium With 0.85-nm EOT

The impact of the gate dielectric quality in developing Au-free D-mode and E-mode recessed gate AlGaN/GaN transistors on a 200mm Si substrate

Heterogeneous Integration and Fabrication of III-V MOS Devices in a 200mm Processing Environment

Germanium surface passivation and atomic layer deposition of high-kdielectrics—a tutorial review on Ge-based MOS capacitors

(Invited) Exploring the ALD Al₂O₃/In_0.53Ga_0.47As and Al₂O₃/Ge Interface Properties: A Common Gate Stack Approach for Advanced III-V/Ge CMOS

Hf-based high-k dielectrics for p-Ge MOS gate stacks