Citation Impact

Citing Papers

Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Field effect transistors with SrTiO3 gate dielectric on Si
2000
Ultrathin (<4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
2001
High dielectric constant oxides
2004 Standout
Noncovalent Functionalization of Single-Walled Carbon Nanotubes
2009 StandoutNobel
Intra-pulse difference-frequency generation of mid-infrared (27–20  μm) by random quasi-phase-matching
2019 StandoutNobel
Millimeter Wave Channel Modeling and Cellular Capacity Evaluation
2014 Standout
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN
2006 StandoutNobel
A Tunable Photosensor
2008 StandoutNobel
Synthesis of Light-Emitting Conjugated Polymers for Applications in Electroluminescent Devices
2009 Standout
Luminescence properties of defects in GaN
2005 Standout
Millimeter-Wave Cellular Wireless Networks: Potentials and Challenges
2014 Standout
Application of limited reaction processing to atomic layer epitaxy: Growth of cadmium telluride using diisopropyl telluride and dimethyl cadmium
1994
Fundamental Electronic Properties and Applications of Single-Walled Carbon Nanotubes
2002
Meeting the Clean Energy Demand:  Nanostructure Architectures for Solar Energy Conversion
2007 Standout
Quantum Dot Solar Cells. Semiconductor Nanocrystals as Light Harvesters
2008 Standout
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
2006 StandoutNobel
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
An introduction to millimeter-wave mobile broadband systems
2011 Standout
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Band offsets of wide-band-gap oxides and implications for future electronic devices
2000 Standout
Semiconducting π-Conjugated Systems in Field-Effect Transistors: A Material Odyssey of Organic Electronics
2011 Standout
Epitaxial perovskite thin films grown on silicon by molecular beam epitaxy
2000
Growth of alternating 〈100〉/〈111〉-oriented II-VI regions for quasi-phase-matched nonlinear optical devices on GaAs substrates
1994
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Low dielectric constant materials for microelectronics
2003 Standout
GaN: Processing, defects, and devices
1999
Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl
1988
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
Organic Thin Film Transistors for Large Area Electronics
2002 Standout
Chemistry and Properties of Nanocrystals of Different Shapes
2005 Standout
Low dielectric constant polymers for microelectronics
2001 Standout
Pyrenecyclodextrin‐Decorated Single‐Walled Carbon Nanotube Field‐Effect Transistors as Chemical Sensors
2008 StandoutNobel
Rapid isothermal processing
1988
Epitaxial oxide thin films on Si(001)
2000
C70 Thin Film Transistors
1996
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Millimeter-wave CMOS design
2005 Standout
Synthesis and luminescence characteristics of conjugated dendrimers with 2,4,6‐triaryl‐1,3,5‐triazine periphery
2005
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Corrections to "density-gradient analysis of mos tunneling"
2001
Titanium Dioxide Nanomaterials:  Synthesis, Properties, Modifications, and Applications
2007 Standout
Imaging the Photoionization of Individual CdSe/CdS Core−Shell Nanocrystals on n- and p-Type Silicon Substrates with Thin Oxides
2004 StandoutNobel
Carbon nanotubes and nanofibers in catalysis
2003 Standout
High-κ gate dielectrics: Current status and materials properties considerations
2001 Standout
Light‐Induced Charge Transfer in Pyrene/CdSe‐SWNT Hybrids
2008 StandoutNobel
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel

Works of D. Vook being referenced

Density-gradient analysis of MOS tunneling
2000
Growth of GaAs by metalorganic chemical vapor deposition using thermally decomposed trimethylarsenic
1987
Exploiting CMOS reverse interconnect scaling in multigigahertz amplifier and oscillator design
2001
Breathing-mode relaxation associated with electron emission and capture processes ofEL2 in GaAs
1992
Rapid thermal annealing of Si-implanted GaAs with trimethylarsenic overpressure
1987
MOS C-V characterization of ultrathin gate oxide thickness (1.3-1.8 nm)
1999
Limited reaction processing: Growth of III-V epitaxial layers by rapid thermal metalorganic chemical vapor deposition
1986
Rankless by CCL
2026