Standout Papers
- 2.2 eV Luminescence in GaN (1995)
- Dynamical study of the yellow luminescence band in GaN (1997)
- Magneto-optical investigation of the neutral donor bound exciton in GaN (1995)
- Free exciton emission in GaN (1996)
- Shallow donors in GaN—The binding energy and the electron effective mass (1995)
- Exciton fine structure in undoped GaN epitaxial films (1996)
Citation Impact
Citing Papers
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Optical signature of Mg-doped GaN: Transfer processes
2012
Exciton and donor - acceptor recombination in undoped GaN on Si(111)
1997
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Optical properties of Si‐, Ge‐ and Sn‐doped GaN
2002
Raman scattering from phonon-polaritons in GaN
2000 StandoutNobel
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
2009 Standout
Growth and applications of Group III-nitrides
1998
Properties of low-pressure chemical vapor epitaxial GaN films grown using hydrazoic acid (HN3)
1997
Optical properties of gallium nitride bulk crystals grown by chloride vapor phase epitaxy
1999
Control of strain in GaN using an In doping-induced hardening effect
2001 StandoutNobel
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
1998 StandoutNobel
Carrier localization of as-grownn-type gallium nitride under large hydrostatic pressure
1996
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
2005 StandoutNobel
Photoluminescence and cathodoluminescence of GaN doped with Pr
2000
Zeeman spectroscopy of shallow donors in GaN
1997
Temperature quenching of photoluminescence intensities in undoped and doped GaN
1999
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template
2001
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition
1999
Exciton binding energies and band gaps in GaN bulk crystals
1998
Photoluminescence and photoluminescence excitation studies of as-grown and P-implanted GaN: On the nature of yellow luminescence
2002
Acceptors in undoped GaN studied by transient photoluminescence
2002
Transient photoluminescence of shallow donor bound excitons in GaN
2010
Luminescence properties of defects in GaN
2005 Standout
Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition
1996
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2000 StandoutNobel
The doping process and dopant characteristics of GaN
2002
Determination of the Conduction Band Electron Effective Mass in Hexagonal GaN
1995 StandoutNobel
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
The Residual Donor Binding Energy in AlGaN Epitaxial Layers
1998 StandoutNobel
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Evidence of compensating centers as origin of yellow luminescence in GaN
1997
Quantized states inGa 1 − x In x N / GaN
2000 StandoutNobel
Photoluminescence studies of excitonic transitions in GaN epitaxial layers
1998
Dynamics of trapping on donors and relaxation of the B‐exciton in GaN
2002
Optical properties of tensile-strained wurtzite GaN epitaxial layers
1997 StandoutNobel
Optical investigations of AlGaN on GaN epitaxial films
1999 StandoutNobel
Thermal treatment effect of the GaN buffer layer on the photoluminescence characteristics of the GaN epilayer
1999
Unusual luminescence lines in GaN
2003
Gas source molecular beam epitaxy of wurtzite GaN on sapphire substrates using GaN buffer layers
1997
Cathodoluminescence studies of the deep level emission bands of AlxGa1−xN films deposited on 6H–SiC(0001)
1998 StandoutNobel
III-V nitrides—important future electronic materials
1999
Photoluminescence of GaN: Effect of electron irradiation
1998 StandoutNobel
Zeeman splittings of excitonic transitions at the Γ point in wurtzite GaN: A magnetoreflectance investigation
1997
Free and bound excitons in thin wurtzite GaN layers on sapphire
1996 StandoutNobel
Dimensionality of excitons in laser-diode structures composed ofIn x Ga 1 − x N
1999 StandoutNobel
Electric-field strength, polarization dipole, and multi-interface band offset in piezoelectricGa 1 − x In x N / G a N
2000 StandoutNobel
Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN
2003
Spin-exchange splitting of excitons in GaN
2001
Transient four-wave-mixing spectroscopy on gallium nitride: Energy splittings of intrinsic excitonic resonances
1997 StandoutNobel
MBE growth and characterization of magnesium-doped gallium nitride
1998
Si in GaN — On the Nature of the Background Donor
1996
Optical properties of wurtzite GaN epilayers grown onA
1998 StandoutNobel
Basic studies of gallium nitride growth on sapphire by metalorganic chemical vapor deposition and optical properties of deposited layers
1995
Cooling dynamics of excitons in GaN
1999 StandoutNobel
Optical properties of GaN epilayers on sapphire
1996
Characterization of blue-green m-plane InGaN light emitting diodes
2009 StandoutNobel
Properties of the yellow luminescence in undoped GaN epitaxial layers
1995 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Piezoelectric Polarization in GaInN/GaN Heterostructures and Some Consequences for Device Design
2000 StandoutNobel
Determination of the spin-exchange interaction constant in wurtzite GaN
1998 StandoutNobel
Photoluminescence of MBE grown wurtzite Be-doped GaN
1998
Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN
2001
Free excitons with n=2 in bulk GaN
1997
Optical characterization of wide bandgap semiconductors
2000 StandoutNobel
Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy
1997
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Photoluminescence studies of GaN layers grown by hydride vapor phase epitaxy
2001
Internal structure and oscillator strengths of excitons in strained α-GaN
1997
Piezoelectric Stark-like Ladder in GaN/GaInN/GaN Heterostructures
1999 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Origin of the Q=11 meV bound exciton in GaN
1997
Reduction of oscillator strength due to piezoelectric fields inG a N / A l x Ga 1 − x N
1998
Intrinsic exciton transitions in GaN
1998 StandoutNobel
Transient photoluminescence of defects in undoped GaN prepared by metal organic vapor phase epitaxy
1999
Anti-Stokes photoluminescence of yellow band in GaN: evidence of two-photon excitation process
1999
Identification of the 1.19-eV luminescence in hexagonal GaN
1995
Defect Donor and Acceptor in GaN
1997
InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
1998 StandoutNobel
Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications
2006
Identification of an ionized-donor-bound-exciton transition in GaN
1997
Growth of GaN without Yellow Luminescence
1995
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Photoluminescence study of the 1.047 eV emission in GaN
1996
Exciton-phonon interactions, exciton binding energy, and their importance in the realization of room-temperature semiconductor lasers based on GaN
1998
Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy
1999
Transient four wave mixing experiments on GaN
1997 Nobel
Free and Bound Excitons in GaN Epitaxial Films
1996
Free excitons in wurtzite GaN
2001
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Pressure and temperature effects on optical transitions in cubic GaN
1999
Temperature dependence of the radiative lifetime in GaN
1998
Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
1998 StandoutNobel
Luminescence Properties of As, P, and Bi as Isoelectronic Traps in GaN
1997
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
2000
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Magneto-optical studies of GaN and GaN/AlxGa1−xN: Donor Zeeman spectroscopy and two dimensional electron gas cyclotron resonance
1996 StandoutNobel
Trends in residual stress for GaN/AlN/6H–SiC heterostructures
1998 StandoutNobel
Photoluminescence of localized excitons in pulsed-laser-deposited GaN
1998
Calculation of shallow donor levels in GaN
2000
Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence
1999
Magneto-optical studies of free-standing hydride-vapor-phase epitaxial GaN
2002
Time-resolved photoluminescence studies of an ionized donor-bound exciton in GaN
1999
Recombination of free and bound excitons in GaN
2008
Predicted maximum mobility in bulk GaN
2001
Effects of defect scattering on the photoluminescence of exciton-polaritons in n-GaN
1998 StandoutNobel
Magneto-optical studies of the 0.88-eV photoluminescence emission in electron-irradiated GaN
2000 StandoutNobel
Correlation of biaxial strains, bound exciton energies, and defect microstructures in gan films grown on AlN/6H-SiC(0001) substrates
1997 StandoutNobel
Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
1999
Band parameters for nitrogen-containing semiconductors
2003 Standout
Electron effective mass in hexagonal GaN
1999
Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
2000
Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN
1997
Degenerate layer at GaN/sapphire interface: Influence on Hall-effect measurements
1997
Defect-related optical transitions in GaN
1996
Broad emission band in GaN epitaxial layers grown on 6H-SiC and sapphire
1997
Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
1997
Ionized donor bound excitons in GaN
1997
Microstructure of epitaxial lateral overgrown AlN on trench-patterned AlN template by high-temperature metal-organic vapor phase epitaxy
2006 StandoutNobel
Localized vibrational modes in GaN:O tracing the formation of oxygenDX
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of D. Volm being referenced
Free exciton emission in GaN
1996 StandoutNobel
GaN On 6H-SiC – Structural And Optical Properties
1994
Dynamical study of the yellow luminescence band in GaN
1997 StandoutNobel
Shallow donors in epitaxial GaN
1997
GaN epitaxial layers grown on 6H-SiC by the sublimation sandwich technique
1994
Electron effective masses in 4H SiC
1995
Exciton fine structure in undoped GaN epitaxial films
1996 StandoutNobel
The Effective Mass Donor in Galliumnitride
1995
Magneto-optical investigation of the neutral donor bound exciton in GaN
1995 StandoutNobel
Time Resolved Photoluminescence Spectroscopy on GaN Epitaxial Layers
1995
Shallow donors in GaN—The binding energy and the electron effective mass
1995 StandoutNobel
Photoluminescence Excitation Studies of the Optical Transitions in GaN
1996 Nobel
Structural and optical analysis of epitaxial GaN on sapphire
1997
Determination of the electron effective-mass tensor in 4HSiC
1996