Citation Impact
Citing Papers
Electron and chemical reservoir corrections for point-defect formation energies
2016
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Evidence of the Zn Vacancy Acting as the Dominant Acceptor inn
2003
Optical signatures of dopants in GaN
2006 StandoutNobel
Fundamentals of zinc oxide as a semiconductor
2009 Standout
Native point defects in ZnO
2007 Standout
Diffusivity of native defects in GaN
2004
First-principles calculations for point defects in solids
2014 Standout
Origin of the red luminescence in Mg-doped GaN
2006
Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy
2005
A review of Ga2O3 materials, processing, and devices
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
Vacancy defects in bulk ammonothermal GaN crystals
2010
Resonant Raman and FTIR spectra of carbon doped GaN
2014 StandoutNobel
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Blue Luminescence of ZnO Nanoparticles Based on Non‐Equilibrium Processes: Defect Origins and Emission Controls
2010 Standout
The doping process and dopant characteristics of GaN
2002
Assessment of correction methods for the band-gap problem and for finite-size effects in supercell defect calculations: Case studies for ZnO and GaAs
2008
Lanthanide-Activated Phosphors Based on 4f-5d Optical Transitions: Theoretical and Experimental Aspects
2017 Standout
Guiding and damping of high-intensity laser pulses in long plasma channels
1998
Growth of Eu-doped GaN by gas source molecular beam epitaxy and its optical properties
2002
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
2008 StandoutNobel
Compensation effect of Mg-doped a- and c-plane GaN films grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Strongly Enhanced Photovoltaic Performance and Defect Physics of Air‐Stable Bismuth Oxyiodide (BiOI)
2017 StandoutNobel
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique
2014 StandoutNobel
Temperature Dependent Capacitance–Voltage Analysis of Unintentionally Doped and Si Doped Al0.82In0.18N Grown on GaN
2011 Nobel
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Commentary: The Materials Project: A materials genome approach to accelerating materials innovation
2013 Standout
Individual Roles of Atoms and Ions during Hydrogen Plasma Passivation of Surface Defects on GaN Created by Plasma Etching
2012 StandoutNobel
Surface morphology study of basic ammonothermal GaN grown on non-polar GaN seed crystals of varying surface orientations from m-plane to a-plane
2013 StandoutNobel
Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films
2009 StandoutNobel
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Shallow acceptors in GaN
2007
Electrical properties of thermally oxidized p-GaN metal–oxide–semiconductor diodes
2003
The Open Quantum Materials Database (OQMD): assessing the accuracy of DFT formation energies
2015 Standout
Recent Advances in ZnO-Based Light-Emitting Diodes
2009
Physics of laser-driven plasma-based electron accelerators
2009 Standout
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
2014 StandoutNobel
Direct evidence of impurity decoration of Ga vacancies inGaN
2006
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
Calculated properties of nitrogen-vacancy complexes in beryllium- and magnesium-doped GaN
2003
Semiconductor thermochemistry in density functional calculations
2008
Photoluminescence of AlxGa1−xAs alloys
1994
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Nature of yellow luminescence band in GaN grown on Si substrate
2014 StandoutNobel
High Tolerance to Iron Contamination in Lead Halide Perovskite Solar Cells
2017 StandoutNobel
Dominant shallow acceptor enhanced by oxygen doping in GaN
2006 StandoutNobel
Works of D. Seghier being referenced
Characterization of donor states in ZnO
2007
Shallow and deep defects in Al Ga1−N structures
2007
Effect of the interface on the electrical properties of ZnSe/GaAs heterojunctions grown by molecular beam epitaxy
1997
Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN:Mg
2000
Vacancy Defects as Compensating Centers in Mg-Doped GaN
2003
Optical and electrical properties of rare earth (Yb,Er) doped GaAs grown by molecular beam epitaxy
1994
Shallow and deep donors in n-type ZnO characterized by admittance spectroscopy
2007
Optical studies of erbium excited states in Ga0.55Al0.45As
1992