Citation Impact
Citing Papers
LAMMPS - a flexible simulation tool for particle-based materials modeling at the atomic, meso, and continuum scales
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Carrier-envelope phase stabilization of a multi-millijoule, regenerative-amplifier-based chirped-pulse smplifier dystem
2009 StandoutNobel
Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
2010 Standout
Platinum single-atom and cluster catalysis of the hydrogen evolution reaction
2016 Standout
Electron photoemission from conducting nitrides (TiNx,TaNx) into SiO2 and HfO2
2005
Prospects of Colloidal Nanocrystals for Electronic and Optoelectronic Applications
2009 Standout
High-k properties of atomic-layer-deposited HfO2 films using a nitrogen-containing Hf[N(CH3)2]4 precursor and H2O oxidant
2003
High dielectric constant oxides
2004 Standout
Atomic layer deposition of hafnium oxide and hafnium silicate thin films using liquid precursors and ozone
2004
Charge-optimized many-body potential for the hafnium/hafnium oxide system
2010
Resistance Switching Behaviors of Hafnium Oxide Films Grown by MOCVD for Nonvolatile Memory Applications
2007
Atomic Layer Deposition Functionalized Composite SOFC Cathode La0.6Sr0.4Fe0.8Co0.2O3-δ -Gd0.2Ce0.8O1.9: Enhanced Long-Term Stability
2013 StandoutNobel
Properties of HfO[sub 2] Thin Films Grown by ALD from Hafnium tetrakis(ethylmethylamide) and Water
2004
A Dual-Metal Gate Integration Process for CMOS With Sub-1-nm EOT<tex>$hbox HfO_2$</tex>by Using HfN Replacement Gate
2004
Increasing permittivity in HfZrO thin films by surface manipulation
2009
Atomic Layer Deposition: An Overview
2009 Standout
Advantages of HfAlON gate dielectric film for advanced low power CMOS application
2005
Hafnium oxide gate dielectrics on sulfur-passivated germanium
2006
Fermi level pinning and Hf–Si bonds at HfO2: Polycrystalline silicon gate electrode interfaces
2004
Ferroelectricity in hafnium oxide thin films
2011 Standout
Comparison between atomic-layer-deposited HfO2 films using O3 or H2O oxidant and Hf[N(CH3)2]4 precursor
2004
Fermi Pinning-Induced Thermal Instability of Metal-Gate Work Functions
2004
Impact of film properties of atomic layer deposited HfO2 resulting from annealing with a TiN capping layer
2006
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Threshold voltage instabilities in high-/spl kappa/ gate dielectric stacks
2005
Ti gate compatible with atomic-layer-deposited HfO2 for n-type metal-oxide-semiconductor devices
2005
High dielectric constant gate oxides for metal oxide Si transistors
2005 Standout
Structural and electrical characterization of Al2O3/HfO2/Al2O3 on strained SiGe
2004
Impact of oxygen on the work functions of Mo in vacuum and on ZrO2
2005
Potential imaging of Si∕HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole
2005
Interface structure and non-stoichiometry in HfO2 dielectrics
2004
Atomic Layer Deposition of Iridium Thin Films
2004
Thermally robust TaTb/sub x/N metal gate electrode for n-MOSFETs applications
2005
Hafnium oxide films by atomic layer deposition for high-κ gate dielectric applications: Analysis of the density of nanometer-thin films
2005
Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Hydroxylamide and Water
2004
Evaluation of a Praseodymium Precursor for Atomic Layer Deposition of Oxide Dielectric Films
2004
Works of D. Roan being referenced
Fermi-Level Pinning at the Polysilicon/Metal–Oxide Interface—Part II
2004
Film properties of ALD HfO2 and La2O3 gate dielectrics grown on Si with various pre-deposition treatments
2004
HfO[sub 2] Gate Dielectrics Deposited via Tetrakis Diethylamido Hafnium
2003
Impact of Zr addition on properties of atomic layer deposited HfO2
2006
Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics
2002
Impact of Deposition and Annealing Temperature on Material and Electrical Characteristics of ALD HfO[sub 2]
2004
Compatibility of silicon gates with hafnium-based gate dielectrics
2003
Fermi-Level Pinning at the Polysilicon/Metal Oxide Interface—Part I
2004
Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics
2002