Citation Impact
Citing Papers
The rise of graphene
2007 StandoutNobel
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Dynamic emission Stokes shift and liquid-like dielectric solvation of band edge carriers in lead-halide perovskites
2019 StandoutNobel
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
2012 Standout
Probing charge scattering mechanisms in suspended graphene by varying its dielectric environment
2012
Single-nanowire electrically driven lasers
2003 StandoutNature
Transport properties ofn Al x Ga 1 − x As ( 0 ≤ x ≤ 0 . 6 )
1984
Growth and applications of Group III-nitrides
1998
GaAs lower conduction-band minima: Ordering and properties
1976
Analysis of polaron effects in the cyclotron resonance ofn-GaAs and AlGaAs-GaAs heterojunctions
1985
Statistics for electrons, solitons, and polarons intrans-polyacetylene and consequences for conductivity
1986
Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study
2002
Temperature Dependent Scattering of Composite Fermions
1995 StandoutNobel
Sonoluminescence and acoustically driven optical phenomena in solids and solid–gas interfaces
1999
Electrical characterization of epitaxial layers
1976
Mobility of the two-dimensional electron gas in GaAs-AlxGa1−xAs heterostructures
1984 StandoutNobel
Electron transport phenomena in small-gap semiconductors
1974
Dimensional resonance of the two-dimensional electron gas in selectively doped GaAs/AlGaAs heterostructures
1983 StandoutNobel
Temperature dependence of the electron mobility in GaAs-GaAlAs heterostructures
1984
Spin relaxation of conduction electrons in bulk III-V semiconductors
2002
Photoluminescence of GaN grown by molecular-beam epitaxy on a freestanding GaN template
2001
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Valley-Valley Splitting in Inversion Layers on a High-Index Surface of Silicon
1978 StandoutNobel
Scattering parameters from an analysis of the hall electron mobility in Ga1−Al As alloys
1982
Simple empirical relationship between mobility and carrier concentration
1974
Luminescence properties of defects in GaN
2005 Standout
Gate-controlled transport in narrow GaAs/Al x Ga 1 − x
1986 StandoutNobel
Spintronics: Fundamentals and applications
2004 Standout
Resonance Raman scattering and optical absorption studies of CdSe microclusters at high pressure
1988 StandoutNobel
Nonradiative dark regions along surface ripples in GaP LPE layers
1977
Thermoelectric properties and figure of merit of a Te-doped InSb bulk single crystal
2005
Low field mobility of 2-d electron gas in modulation doped AlxGa1−xAs/GaAs layers
1983
Phonon-drag thermopower of a two-dimensional electron gas in a quantizing magnetic field
1989
Variation of lattice parameters in GaN with stoichiometry and doping
1979
Material parameters of In1−xGaxAsyP1−y and related binaries
1982
Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
1986 StandoutNobel
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Advanced Thermoelectric Design: From Materials and Structures to Devices
2020 Standout
Deformation Potentials of k = 0 States of Tetrahedral Semiconductors
1984
Current scaling in the integer quantum Hall effect
1994 StandoutNobel
Two-Dimensional Magnetotransport in the Extreme Quantum Limit
1982 StandoutNobel
Vacancy phonon scattering in thermoelectric In2Te3–InSb solid solutions
2009
Stability of the wurtzite-type structure under high pressure: GaN and InN
1994 StandoutNobel
Theory of free-electron optical absorption in n-GaAs
1984
The Origin of Dark Region in LPE GaP Associating with Macrostep Riser
1985
Fundamental Relation between Electrical and Thermoelectric Transport Coefficients in the Quantum Hall Regime
1997 StandoutNobel
Calculating polaron mobility in halide perovskites
2017
Nanocrystals of Cesium Lead Halide Perovskites (CsPbX3, X = Cl, Br, and I): Novel Optoelectronic Materials Showing Bright Emission with Wide Color Gamut
2015 Standout
GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
1985 Standout
Long-lasting photoluminescence in freestanding GaN templates
2003
Stability/degradation of polymer solar cells
2008 Standout
Spatial Control of Multiphoton Electron Excitations in InAs Nanowires by Varying Crystal Phase and Light Polarization
2017 StandoutNobel
Magnetic-Field-Induced Spin-Conserving and Spin-Flip Intersubband Transitions in InAs Quantum Wells
1995 StandoutNobel
Temperature and pressure dependence of the Γ1celectron mobility in GaSb
1973
Determination of the spin-exchange interaction constant in wurtzite GaN
1998 StandoutNobel
Bulk nanostructured thermoelectric materials: current research and future prospects
2009 Standout
Observation of a Bloch-Grüneisen regime in two-dimensional electron transport
1990 StandoutNobel
Perspectives on thermoelectrics: from fundamentals to device applications
2011
Two-dimensional electron transport in semiconductor layers. I. Phonon scattering
1981
The Quantized Hall Effect
1983 StandoutScienceNobel
ac conductivity of emeraldine polymer
1989 StandoutNobel
Electron transport and band structure ofGa 1 − x Al x As
1980
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
2003 Standout
Energy relaxation of two-dimensional electrons and the deformation potential constant in selectively doped AlGaAs/GaAs heterojunctions
1986
Solitons in conducting polymers
1988 StandoutNobel
Filling-factor-dependent cyclotron mass in space-charge layers on GaAs
1988 StandoutNobel
Spin relaxation of holes in the split-hole band of InP and GaSb
1987
Advances in thermoelectric materials research: Looking back and moving forward
2017 StandoutScience
Electronic comparison of InAs wurtzite and zincblende phases using nanowire transistors
2013
GaN: Processing, defects, and devices
1999
Electrical and optical properties of InP grown by molecular beam epitaxy using cracked phosphine
1983
Electronic states of semiconductor clusters: Homogeneous and inhomogeneous broadening of the optical spectrum
1988 StandoutNobel
Quantum Cascade Laser
1994 StandoutScience
Rationally Designing High-Performance Bulk Thermoelectric Materials
2016 Standout
Low-etch-pit-density GaN substrates by regrowth on free-standing GaN films
2002
Effects of two longitudinal optical-phonon modes on electron distribution in GaxIn1−xAsyP1−y
1982
Molecular beam epitaxial growth of GaP on Si
1984 StandoutNobel
Electrogenerated Chemiluminescence and Its Biorelated Applications
2008 Standout
Molecular beam epitaxy
1975 Standout
Strain-related phenomena in GaN thin films
1996 StandoutNobel
Mobility transition in the two-dimensional electron gas in GaAsAlGaAs heterostructures
1985 StandoutNobel
Microtesla MRI with a superconducting quantum interference device
2004 StandoutNobel
Electron mobility inGa 1 − x Al x As
1981
Control of lattice parameters and dislocations in the system Ga1−xAlxAs1−yPy/GaAs
1974
Electrical properties of n-type vapor-grown gallium nitride
1973
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
Minority-carrier lifetimes and internal quantum efficiency of surface-free GaAs
1978
The defect structure of CuInS2. part I: Intrinsic defects
1989
Recent Advances in Bulk Heterojunction Polymer Solar Cells
2015 Standout
Influence of a One-Dimensional Superlattice on a Two-Dimensional Electron Gas
1977
Gallium Nitride Nanowire Nanodevices
2002
Optically detected magnetic resonance of (effective-mass) shallow acceptors in Si-doped GaN homoepitaxial layers
2003
Surface Band Structure of Electron Inversion Layers on Vicinal Planes of Si(100)
1978 StandoutNobel
Cathodoluminescence of MOVPE-grown GaN layer on α-Al2O3
1990 StandoutNobel
Inhibited Spontaneous Emission in Solid-State Physics and Electronics
1987 Standout
Unusual properties of the dominant acceptor in freestanding GaN
2003
Electron mobilities in modulation-doped semiconductor heterojunction superlattices
1978 StandoutNobel
Ultrafast Dynamics of Surface Plasmons in InAs by Time-Resolved Infrared Nanospectroscopy
2014
Statistics and Free Carrier Concentration in Highly Doped Semiconducting Trans-Polyacetylene
1985
New insight into InSb-based thermoelectric materials: from a divorced eutectic design to a remarkably high thermoelectric performance
2017
Observation of Magnetophonon Resonances in a Two-Dimensional Electronic System
1980 StandoutNobel
Works of D. L. Rode being referenced
Electron scattering in semiconductor alloys
1983
Dopant tracing of terrace growth in GaAs LPE layers
1978
Isothermal diffusion theory of LPE: GaAs, GaP, bubble garnet
1973
Crystal growth terraces and surface reconstruction
1974
Measurement of lattice dilatation in LPE GaAs due to Ge acceptor doping
1975
How much Al in the AlGaAs–GaAs laser?
1974
Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy
2001
Electron Mobility in II-VI Semiconductors
1970
Subnanometer surface roughness of dc magnetron sputtered Al films
2007
Electron Transport in InSb, InAs, and InP
1971
Theory of Electron Galvanomagnetics in Crystals: Hall Effect in Semiconductors and Semimetals
1973
Electron Mobility in Ge, Si, and GaP
1972
Electron Transport in GaAs
1971
Electron Hall mobility of n-GaN
1995
Electron Mobility in Direct-Gap Polar Semiconductors
1970