Citation Impact
Citing Papers
Tunnel field-effect transistors as energy-efficient electronic switches
2011 StandoutNature
Growth and applications of Group III-nitrides
1998
Physics of high-power InGaN/GaN lasers
2002 StandoutNobel
The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer
1993 StandoutNobel
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
2002 StandoutNobel
Temperature dependence of excitonic transitions in a-plane AlN epitaxial layers
2009 StandoutNobel
The deposition of group III nitrides on silicon substrates
1979
Remote plasma deposition of aluminum nitride
1991
III-V nitrides for electronic and optoelectronic applications
1991 StandoutNobel
Low temperature deposition of AIN films by an alternate supply of trimethyl aluminum and ammonia
1996
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface
1996 StandoutNobel
Complementary tunneling transistor for low power application
2004
Band gap bowing and refractive index spectra of polycrystalline AlxIn1−xN films deposited by sputtering
1997
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Temperature Dependence of Band Gap Change in InN and AlN
1994
Progress and prospects of group-III nitride semiconductors
1996
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
Metalorganic Vapor Phase Epitaxial Growth of High-Quality AlInN/AlGaN Multiple Layers on GaN
2001 StandoutNobel
Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy
2000 StandoutNobel
Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region
1979
The optical absorption edge of single-crystal AlN prepared by a close-spaced vapor process
1978
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Microstructural evolution and defect formation during the initial stages of the growth of silicon carbide and aluminum nitride on α(6H)-SiC(0001) substrates
1996 StandoutNobel
Microstructure of thick AlN grown on sapphire by high‐temperature MOVPE
2006 StandoutNobel
Structural and optical properties of AlInN and AlGaInN on GaN grown by metalorganic vapor phase epitaxy
1998 StandoutNobel
Defect‐Rich MoS2 Ultrathin Nanosheets with Additional Active Edge Sites for Enhanced Electrocatalytic Hydrogen Evolution
2013 Standout
Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
1998 StandoutNobel
Observation of photoluminescence from Al1−xInxN heteroepitaxial films grown by metalorganic vapor phase epitaxy
1998 StandoutNobel
Aluminum Nitride Epitaxially Grown on Silicon: Orientation Relationships
1981
Plasma-enhanced chemical vapour deposition of AlN coatings on graphite substrates
1987
Control of the Detection Wavelength in AlGaN/GaN-Based Hetero-Field-Effect-Transistor Photosensors
2013 StandoutNobel
Structural characterization of Al1−In N lattice-matched to GaN
2000 StandoutNobel
Mosaic Structure of Ternary Al 1-xInxN Films on GaN Grown by Metalorganic Vapor Phase Epitaxy
1999 StandoutNobel
Epitaxial growth of AlN by plasma-assisted, gas-source molecular beam epitaxy
1993 StandoutNobel
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Conventional and pendeo-epitaxial growth of GaN(0001) thin films on Si(111) substrates
2001 StandoutNobel
Growth mechanism of c-axis-oriented AlN on (1 1 1) diamond substrates by metal-organic vapor phase epitaxy
2009 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Energy band gaps and lattice parameters evaluated with the Heyd-Scuseria-Ernzerhof screened hybrid functional
2005 Standout
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Improved refractive index formulas for the AlxGa1−xN and InyGa1−yN alloys
2001
Structural Properties of Al 1- xIn xN Ternary Alloys on GaN Grown by Metalorganic Vapor Phase Epitaxy
1998 StandoutNobel
Schottky barrier height and electron affinity of titanium on AlN
2000 StandoutNobel
Trends in semiconductor defect engineering at the nanoscale
2010
Band parameters for nitrogen-containing semiconductors
2003 Standout
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Works of D. Bolze being referenced
Advanced activation of ultra-shallow junctions using flash-assisted RTP
2005
Optical properties of aluminium nitride prepared by chemical and plasmachemical vapour deposition
1977
Chemical and plasmachemical vapour deposition of aluminium nitride layers
1976
The impact of supersaturated carbon on transient enhanced diffusion
1999
Mechanisms of B deactivation control by F co-implantation
2005