Citation Impact
Citing Papers
Shear-induced unfolding triggers adhesion of von Willebrand factor fibers
2007 Standout
Acoustic manipulation of small droplets
2004
Optical Properties of ZnO Nanostructures
2006 Standout
Comparison of nitrogen incorporation in molecular-beam epitaxy of GaAsN, GaInAsN, and GaAsSbN
2000
Optically pumped (GaIn)As/Ga(PAs) vertical-cavity surface-emitting lasers with optimized dynamics
1999
Ultrafast Wavelength-Dependent Lasing-Time Dynamics in Single ZnO Nanotetrapod and Nanowire Lasers
2005
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures
2002
Electronics and sensors based on pyroelectric AlGaN/GaN heterostructures
2003
Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration
2001
Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy
2003
Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies
2002
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
2003 StandoutNobel
Magneto-optical and light-emission properties of III As N semiconductors
2002
From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy
2000
Surface potential effect on excitons in AlGaN/GaN quantum well structures
2013 StandoutNobel
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Electronic structure ofIn y Ga 1 − y As 1 − x N x / GaAs multiple quantum wells in the dilute-Nregime from pressure andk ⋅ p studies
2002
Electrowetting: from basics to applications
2005 Standout
Band anticrossing in highly mismatched III V semiconductor alloys
2002
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Optical injection probing of single ZnO tetrapod lasers
2005
Comparative study of field-dependent carrier dynamics and emission kinetics of InGaN/GaN light-emitting diodes grown on (112¯2) semipolar versus (0001) polar planes
2014 StandoutNobel
Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
2013 StandoutNobel
Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy
2008 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
Works of D. Bernklau being referenced
Electronic states and band alignment in GalnNAs/GaAs quantum-well structures with low nitrogen content
2000
Emission dynamics of In0.2Ga0.8As/GaAs λ and 2λ microcavity lasers
1996
Growth of high quality InGaAsN heterostructures and their laser application
2001
Nonlinear acoustoelectric interactions in GaAs/LiNbO3 structures
1999
High power CW operation of InGaAsN lasers at 1.3µm
1999
Influence of carrier relaxation on the dynamics of stimulated emission in microcavity lasers
1997
Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content
2002