C.L. Chan

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

The ReaxFF reactive force-field: development, applications and future directions

A review of Ga2O3 materials, processing, and devices

Recent development of gallium oxide thin film on GaN

Pd doped WO3 films prepared by sol–gel process for hydrogen sensing

Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Improved Subthreshold Swing and Gate-Bias Stressing Stability of p-Type $\hbox{Cu}_{2}\hbox{O}$ Thin-Film Transistors Using a $\hbox{HfO}_{2}$ High-$k$ Gate Dielectric Grown on a $\hbox{SiO}_{2}/\hbox{Si}$ Substrate by Pulsed Laser Ablation

Sensing mechanism of hydrogen gas sensor based on RF-sputtered ZnO thin films

Enhanced hydrogen-sensing characteristics of MISiC Schottky-diode hydrogen sensor by trichloroethylene oxidation

Improved electrical properties of Germanium MOS capacitors with gate dielectric grown in wet-NO ambient

Improved performance and reliability of N₂O-grown oxynitride on 6H-SiC

Improved electrical properties of HfTiO/GeO x N y gate dielectric Ge MOS capacitors by using wet–NO Ge-surface pretreatment