Citation Impact
Citing Papers
Effects of radiation and charge trapping on the reliability of high- κ gate dielectrics
2004
Radiation-induced soft errors in advanced semiconductor technologies
2005 Standout
A review of Ga2O3 materials, processing, and devices
2018 Standout
Basic mechanisms and modeling of single-event upset in digital microelectronics
2003 Standout
Single event gate rupture in thin gate oxides
1997
Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electron or X-ray irradiation
2000
Total ionizing dose effects in MOS oxides and devices
2003 Standout
Breakdown of gate oxides during irradiation with heavy ions
1998
Reliability degradation of ultra-thin oxynitride and Al 2 O 3 gate dielectric films owing to heavy-ion irradiation
2002
Single-event effects in avionics
1996
Neutron-induced single event burnout in high voltage electronics
1997
Radiation Effects in Commercial 1200 V 24 A Silicon Carbide Power MOSFETs
2012
Total ionizing dose effects in bipolar devices and circuits
2003
Precursor ion damage and angular dependence of single event gate rupture in thin oxides
1998
Lest we remember
2009 Standout
A model of radiation induced leakage current (RILC) in ultra-thin gate oxides
1999
Heavy ion irradiation of thin gate oxides
2000
Radiation Effects in MOS Oxides
2008 Standout
Analysis of radiation effects on individual DRAM cells
2000
Destructive single-event effects in semiconductor devices and ICs
2003
Heavy-ion-induced breakdown in ultra-thin gate oxides and high-k dielectrics
2001
Works of C.F. Wheatley being referenced
Measurement of a cross-section for single-event gate rupture in power MOSFETs
1996
A conceptual model of a single-event gate-rupture in power MOSFETs
1993
SEGR: A unique failure mode for power MOSFETs in spacecraft
1996
A study of ion energy and its effects upon an SEGR-hardened stripe-cell MOSFET technology [space-based systems]
2001
Influence of ion beam energy on SEGR failure thresholds of vertical power MOSFETs
1996
A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs
1996
SEGR response of a radiation-hardened power MOSFET technology
1996
SEGR and SEB in n-channel power MOSFETs
1996
Effect of ion energy upon dielectric breakdown of the capacitor response in vertical power MOSFETs
1998
An improved stripe-cell SEGR hardened power MOSFET technology
2001
Single-event gate rupture in vertical power MOSFETs; an original empirical expression
1994
The effects of ionizing radiation on power-MOSFET termination structures
1989
Development of cosmic ray hardened power MOSFET's
1989
Experimental studies of single-event gate rupture and burnout in vertical power MOSFETs
1996
Impact of oxide thickness on SEGR failure in vertical power MOSFETs; development of a semi-empirical expression
1995
Proton-induced dielectric breakdown of power MOSFETs
1998
Prediction of early lethal SEGR failures of VDMOSFETs for commercial space systems'
1999
Experimental evidence of the temperature and angular dependence in SEGR [power MOSFET]
1996
Early lethal SEGR failures of VDMOSFETs considering nonuniformity in the rad-hard device distribution
2001
Single-event gate-rupture in power MOSFETs: prediction of breakdown biases and evaluation of oxide thickness dependence
1995