C.-A. Berseth

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

Control of growth mode in Mg-doped GaN/AlN heterostructure

High-contrast gratings for integrated optoelectronics

Large-area single-mode VCSELs and the self-aligned surface relief

Influence of High Temperature in the Growth of Low Dislocation Content AlN Bridge Layers on Patterned 6H-SiC Substrates by Metalorganic Vapor Phase Epitaxy

Electrical Design Optimization of Single-Mode Tunnel-Junction-Based Long-Wavelength VCSELs

GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes

Integrated semiconductor vertical-cavity surface-emitting lasers and PIN photodetectors for biomedical fluorescence sensing

Temperature dependence of the band gap in InAsyP1−y

Conduction-Band Discontinuity of InAsP/InP Heterojunction

Band parameters for III–V compound semiconductors and their alloys

Energy Efficient and Energy Proportional Optical Interconnects for Multi-Core Processors: Driving the Need for On-Chip Sources

Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation

Optical Design of InAlGaAs Low-Loss Tunnel-Junction Apertures for Long-Wavelength Vertical-Cavity Lasers

Development of high efficiency 255–355 nm AlGaN‐based light‐emitting diodes

III–Nitride UV Devices

High quality AlN grown on SiC by metal organic chemical vapor deposition

Lasing in direct-bandgap GeSn alloy grown on Si

Optically resonant dielectric nanostructures

1550 nm-band VCSEL 0.76 mW singlemode output power in 20–80°C temperature range

1.5-mW Single-Mode Operation of Wafer-Fused 1550-nm VCSELs

Vertical cavity surface emitting lasers incorporating structured mirrors patterned by electron-beam lithography

Low threshold 1.55 μm wavelength InAsP/InGaAsP strained multiquantum well laser diode grown by chemical beam epitaxy

High-performance single-mode VCSELs in the 1310-nm waveband