Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
High efficiency white LEDs with single-crystal ZnO current spreading layers deposited by aqueous solution epitaxy
2011 StandoutNobel
Improvement of light output power of InGaN/GaN light-emitting diode by lateral epitaxial overgrowth using pyramidal-shaped SiO_2
2010
Selective area epitaxy of ultra-high density InGaN quantum dots by diblock copolymer lithography
2011
Perovskite energy funnels for efficient light-emitting diodes
2016 Standout
Temperature-dependent nonradiative recombination processes in GaN-based nanowire white-light-emitting diodes on silicon
2012
Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells
2011 Standout
Mixed Transition‐Metal Oxides: Design, Synthesis, and Energy‐Related Applications
2014 Standout
Activation characteristics of ion-implanted Si+ in AlGaN
2005
Silicon implantation in epitaxial GaN layers: Encapsulant annealing and electrical properties
2004
A review of Ga2O3 materials, processing, and devices
2018 Standout
Microstructures of GaInN/GaInN Superlattices on GaN Substrates
2010 StandoutNobel
Novel activation process for Mg-implanted GaN
2013 StandoutNobel
Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma – effect of TMG flow rate and VHF power
2014 StandoutNobel
Photoconductivity studies of treated CdSe quantum dot films exhibiting increased exciton ionization efficiency
2004 StandoutNobel
GaN-Based RF Power Devices and Amplifiers
2008 Standout
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures
2009 Science
Electrical-optical analysis of a GaN/sapphire LED chip by considering the resistivity of the current-spreading layer
2009
Zinc oxide nanostructures and their applications
2011
Electrical activation characteristics of silicon-implanted GaN
2005
Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation
2017
Nitride-based cascade near white light-emitting diodes
2002
Enhanced Light Output of GaN-Based Light-Emitting Diodes With Embedded Voids Formed on Si-Implanted GaN Layers
2011
GaN-based p-type metal-oxide–semiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method
2010
Growth and Anion Exchange Conversion of CH3NH3PbX3 Nanorod Arrays for Light-Emitting Diodes
2015
Zinc Oxide—From Synthesis to Application: A Review
2014 Standout
Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH_3 interrupted etching
2014 StandoutNobel
Growth mechanism of atmospheric pressure MOVPE of GaN and its alloys: gas phase chemistry and its impact on reactor design
2004
High-Detectivity GaN MSM Photodetectors with Low-Temperature GaN Cap Layers and Ir∕Pt Contact Electrodes
2007
InGaN quantum dot photodetectors
2003
Carrier Injections in Nitride-Based Light Emitting Diodes Including Two Active Regions with Mg-Doped Intermediate Layers
2013 StandoutNobel
A Survey of Wide Bandgap Power Semiconductor Devices
2013 Standout
Characteristics of a-plane GaN films grown on optimized silicon-dioxide-patterned r-plane sapphire substrates
2013 StandoutNobel
Investigations of Polarization-Induced Hole Accumulations and Vertical Hole Conductions in GaN/AlGaN Heterostructures
2013 StandoutNobel
Nonalloyed ohmic contacts in AlGaN/GaN HEMTs by ion implantation with reduced activation annealing temperature
2006
Structure and formation mechanism of V defects in multiple InGaN∕GaN quantum well layers
2006
Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN
2009
Works of C. J. Tun being referenced
Temperature-dependent study of n-ZnO∕p-GaN diodes
2007
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes with an AlGaN electron-blocking layer grown at low temperature
2003
Characterization of GaN Schottky barrier photodetectors with a low-temperature GaN cap layer
2003
Planar GaN n+–p photodetectors formed by Si implantation into p-GaN
2002
Enhanced efficiency of GaN-based light-emitting diodes with periodic textured Ga-doped ZnO transparent contact layer
2007
Improvement of InGaN/GaN laser diodes by using a Si-doped In/sub 0.23/Ga/sub 0.77/N/GaN short-period superlattice tunneling contact layer
2003
n + - GaN formed by Si implantation into p-GaN
2002
GaN p–n junction diode formed by Si ion implantation into p-GaN
2002
Improvement of near-ultraviolet InGaN/GaN light-emitting diodes by inserting an in situ rough SiNx interlayer in n-GaN layers
2003
Improvement of near-ultraviolet InGaN-GaN light-emitting diodes through higher pressure grown underlying GaN layers
2003
Ultra-High-Density InGaN Quantum Dots Grown by Metalorganic Chemical Vapor Deposition
2004
Characterization of Si implants in p-type GaN
2002