Citation Impact
Citing Papers
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
Growth and applications of Group III-nitrides
1998
Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors
2000 StandoutScience
Control of strain in GaN using an In doping-induced hardening effect
2001 StandoutNobel
1998
Structural and optical properties of GaN laterally overgrown on Si(111) by metalorganic chemical vapor deposition using an AlN buffer layer
1999
Hole scattering and optical transitions in wide-band-gap nitrides: Wurtzite and zinc-blende structures
1997
Stimulated emission and lasing in whispering-gallery modes of GaN microdisk cavities
1999
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Exciton binding energies and band gaps in GaN bulk crystals
1998
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
1998 StandoutNobel
High internal and external quantum efficiency InGaN/GaN solar cells
2011 StandoutNobel
Partial strain relaxation via misfit dislocation generation at heterointerfaces in (Al,In)GaN epitaxial layers grown on semipolar (112¯2) GaN free standing substrates
2009 StandoutNobel
Internal structure of acceptor-bound excitons in wide-band-gap wurtzite semiconductors
2010
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Quantized states inGa 1 − x In x N / GaN
2000 StandoutNobel
Thermal Decomposition of the Non-Interstitial Hydrides for the Storage and Production of Hydrogen
2004 Standout
Photoluminescence studies of excitonic transitions in GaN epitaxial layers
1998
Optical metastability in bulk GaN single crystals
1997 StandoutNobel
Growth and deep ultraviolet picosecond time-resolved photoluminescence studies of AlN/GaN multiple quantum wells
2001
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Optical spectroscopy of GaN grown by metalorganic vapor phase epitaxy using indium surfactant
2000 StandoutNobel
Determination of exciton transition energy and bowing parameter of AlGaN alloys in AlGaN/GaN heterostructure by means of reflectance measurement
2001
Effect of indium doping on the transient optical properties of GaN films
1999
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
1998
Anomalous features in the optical properties of Al1−xInxN on GaN grown by metal organic vapor phase epitaxy
2000 StandoutNobel
Recent advances in the chemistry of the Group 13 metals: hydride derivatives and compounds involving multiply bonded Group 13 metal atoms
1999
Determination of the band-gap energy of Al1−xInxN grown by metal–organic chemical-vapor deposition
1997
Binding energy for the intrinsic excitons in wurtzite GaN
1996 StandoutNobel
Optical properties of InGaN quantum wells
1999 StandoutNobel
Cyclotron resonance and quantum Hall effect studies of the two-dimensional electron gas confined at the GaN/AlGaN interface
1997
Theoretical analysis of d electron effects on the electronic properties of wurtzite and zincblende GaN
2003
Bound exciton dynamics in GaN grown by hydride vapor-phase epitaxy
1999
Yellow Band and Deep levels in Undoped MOVPE GaN.
1996
Buried stressors in nitride semiconductors: Influence on electronic properties
2005
Piezoelectric effects on the optical properties of GaN/AlxGa1−xN multiple quantum wells
1998
Growth model for GaN with comparison to structural, optical, and electrical properties
1998
Cooling dynamics of excitons in GaN
1999 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching
2004 StandoutNobel
The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation
1998
Temperature-varied photoluminescence and magnetospectroscopy study of near-band-edge emissions in GaN
2001
Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates
2006 StandoutNobel
III–nitrides: Growth, characterization, and properties
2000
Free excitons with n=2 in bulk GaN
1997
Metastability of Oxygen Donors in AlGaN
1998
Deep levels and persistent photoconductivity in GaN thin films
1997
Low-Intensity Ultraviolet Photodetectors Based on AlGaN
1999 StandoutNobel
Properties of the main Mg-related acceptors in GaN from optical and structural studies
2014 StandoutNobel
Low noise p-π-n GaN ultraviolet photodetectors
1997
First-principles study on electronic and elastic properties of BN, AlN, and GaN
1998
Optically pumped lasing of ZnO at room temperature
1997 Standout
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
2002 StandoutNobel
Electronic band structures and effective-mass parameters of wurtzite GaN and InN
1998
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
1999
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
One‐Dimensional Nanostructures: Synthesis, Characterization, and Applications
2003 Standout
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers
2001
Influences of initial nitridation and buffer layer deposition on the morphology of a (0001) GaN layer grown on sapphire substrates
1998
Room-Temperature Ultraviolet Nanowire Nanolasers
2001 StandoutScience
Investigation of the Leakage Current in GaN P-N Junctions
1998 StandoutNobel
Room-temperature gain spectra and lasing in microcrystalline ZnO thin films
1998
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
GaN: Processing, defects, and devices
1999
Atomic origin of deep levels in p-type GaN: Theory
1997
Ab initio study of phonons in wurtzite AlxGa1−xN alloys
2000
Strain effects on excitonic transitions in GaN: Deformation potentials
1996 StandoutNobel
Chemistry and Properties of Nanocrystals of Different Shapes
2005 Standout
Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire
1997
Large-scale synthesis of single crystalline gallium nitride nanowires
1999
Electronic structure calculations on nitride semiconductors
1999
Ultraviolet-sensitive, visible-blind GaN photodiodes fabricated by molecular beam epitaxy
1997
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
Schottky barrier detectors on GaN for visible–blind ultraviolet detection
1997
In situ optical monitoring of the decomposition of GaN thin films
1999
MOCVD Growth of High Output Power Ingan Multiple Quantum Well Light Emitting Diode
1997
Phonons and related crystal properties from density-functional perturbation theory
2001 Standout
Luminescences from localized states in InGaN epilayers
1997 StandoutNobel
Free Excitons in GaN
1996 StandoutNobel
Band-gap and k.p. parameters for GaAlN and GaInN alloys
1999
LEDs for Solid-State Lighting: Performance Challenges and Recent Advances
2009
Ultrahigh Si+ implant activation efficiency in GaN using a high-temperature rapid thermal process system
1998
MOVPE of GaInN heterostructures and quantum wells
1998
Free excitons in wurtzite GaN
2001
Spatially resolved cathodoluminescence spectra of InGaN quantum wells
1997 StandoutNobel
Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN
1998
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part I. Binary compounds GaN, AlN, and InN
2000
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
2007
Visible blind GaN p-i-n photodiodes
1998
Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry
2000
Novel Defect Complexes and Their Role in thep
1999
III–Nitride UV Devices
2005
Two-step Process for the Metalorganic Chemical Vapor Deposition Growth of High Quality AlN Films on Sapphire
2003
Stimulated emission from optically pumped GaN quantum dots
1997
Interactions of hydrogen with native defects in GaN
1997
Recombination of free and bound excitons in GaN
2008
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Observation of highly dispersive surface states on GaN(0001)1×1
1999 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures
2009 StandoutNobel
Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells
2012 StandoutNobel
Effective masses and valence-band splittings in GaN and AlN
1997
Persistent photoconductivity in n-type GaN
1997
Structural reconstruction of hexagonal to cubic ZnO films on Pt/Ti/SiO2/Si substrate by annealing
2003
Yellow luminescence and related deep states in undoped GaN
1997
Photoluminescence excitation spectroscopy of GaN thin layers as a function of temperature
1997
Analysis of Broken Symmetry in Convergent-Beam Electron Diffraction along <1120 > and <1100 > Zone-Axes of AlN for Polarity Determination
2013 StandoutNobel
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Fabrication of GaN nanotubular material using MOCVD with an aluminium oxide membrane
2005
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Porous Anodic Aluminum Oxide: Anodization and Templated Synthesis of Functional Nanostructures
2014 Standout
Works of C. J. Sun being referenced
Visible-blind ultraviolet photodetectors based onGaN p - n junctions
1995
Acceptor-bound exciton recombination dynamics in p-type GaN
1995
Free excitonic transitions in GaN, grown by metal-organic chemical-vapor deposition
1996
InGaN-GaN based light-emitting diodes over (111) spinel substrates
1996
Cleaved cavity optically pumped InGaN–GaN laser grown on spinel substrates
1996
High transconductance heterostructure field-effect transistors based on AlGaN/GaN
1996
Fundamental optical transitions in GaN
1996
High quality aluminum nitride epitaxial layers grown on sapphire substrates
1994
Photoluminescence and reflectance studies of exciton transitions in wurtzite GaN under pressure
1998
Enhancement and depletion mode GaN/AlGaN heterostructure field effect transistors
1996
Thermal stability of GaN thin films grown on (0001) Al2O3, (0112) Al2O3 and (0001)Si 6H-SiC substrates
1994
Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire
1998
Quantum shift of band-edge stimulated emission in InGaN–GaN multiple quantum well light-emitting diodes
1997
A crystallographic model of (00⋅1) aluminum nitride epitaxial thin film growth on (00⋅1) sapphire substrate
1994
Femtosecond degenerate four-wave mixing of GaN on sapphire: Measurement of intrinsic exciton dephasing time
1997
Mg-doped green light emitting diodes over cubic (111) MgAl2O4 substrates
1997
Metastability and persistent photoconductivity in Mg-doped p-type GaN
1996
High quality GaN–InGaN heterostructures grown on (111) silicon substrates
1996
Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices
1995
Crystallography of epitaxial growth of wurtzite-type thin films on sapphire substrates
1994
Deposition of high quality wurtzite GaN films over cubic (111) MgAl2O4 substrates using low pressure metalorganic chemical vapor deposition
1996
Neutral-donor-bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition
1995
Photoluminescence study of high quality InGaN–GaN single heterojunctions
1996
Two-dimensional electron gas in GaN–AlGaN heterostructures deposited using trimethylamine-alane as the aluminum source in low pressure metalorganic chemical vapor deposition
1995
Gain spectra and stimulated emission in epitaxial (In,Al) GaN thin films
1996