Citation Impact
Citing Papers
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Performance and design of InGaAs/InP photodiodes for single-photon counting at 155 µm
2000
Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
2010
Atom probe tomography and transmission electron microscopy of a Mg-doped AlGaN/GaN superlattice
2010
Atom probe tomography study of Mg-doped GaN layers
2014 StandoutNobel
Ultraviolet detectors based on epitaxial ZnO films grown by MOCVD
2000
Mg-rich precipitates in the p-type doping of InGaN-based laser diodes
2002
The generation of misfit dislocations in facet-controlled growth of AlGaN∕GaN films
2004 StandoutNobel
Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN
2001 StandoutNobel
Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices
1999
Luminescence properties of defects in GaN
2005 Standout
Effect of doping and polarization on carrier collection in InGaN quantum well solar cells
2011 StandoutNobel
Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth
2008 StandoutNobel
Pyramidal defects in metalorganic vapor phase epitaxial Mg doped GaN
2000
Long-period time-dependent luminescence in reactive ion-etched GaN
2000
Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
2000 StandoutNobel
Effect of the growth rate and the barrier doping on the morphology and the properties of InGaN/GaN quantum wells
1998
Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
1999 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Equivalent-Circuit Analysis for the Electroluminescence-Efficiency Problem of InGaN/GaN Light-Emitting Diodes
2008 StandoutNobel
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
1999
Localized quantum well excitons in InGaN single-quantum-well amber light-emitting diodes
2000 StandoutNobel
Formation and reduction of pyramidal hillocks on m-plane {11¯00} GaN
2007 StandoutNobel
Relationship between crystallographic orientation and 3.42 eV emission bands in GaN grown by HVPE on Si substrate
1999
Solar-Blind UV Photodetectors Based on GaN/AlGaN p-i-n Photodiodes
2000 StandoutNobel
Improvement of Low-Intensity Ultraviolet Photodetectors Based on AlGaN with Low Threading Dislocation Density
1999 StandoutNobel
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
Heavy doping effects in Mg-doped GaN
2000
Light emission and microstructure of Mg-doped AlGaN grown on patterned sapphire
2003 StandoutNobel
Epitaxial lateral overgrowth techniques used in group III nitride epitaxy
2001
Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)
2000
Mg acceptors in GaN: Dependence of the g-anisotropy on the doping concentration
1999 StandoutNobel
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
Demonstration of a low-noise near-infrared photon counter with multiphoton discrimination
2003 StandoutNobel
Betavoltaic power sources
2012 Standout
Effect of annealing on metastable shallow acceptors in Mg-doped GaN layers grown on GaN substrates
2008 StandoutNobel
Higher efficiency InGaN laser diodes with an improved quantum well capping configuration
2002 StandoutNobel
Detailed feasibility study on a flame detector using AlGaN photosensors
2000 Nobel
Growth model for GaN with comparison to structural, optical, and electrical properties
1998
Graphene-Like Two-Dimensional Materials
2013 Standout
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Pyramidal inversion domain boundaries revisited
2011
Epitaxial Lateral Overgrowth of GaN
2001
Doping screening of polarization fields in nitride heterostructures
2000
Low-Intensity Ultraviolet Photodetectors Based on AlGaN
1999 StandoutNobel
Faceted inversion domain boundary in GaN films doped with Mg
2000
Low noise p-π-n GaN ultraviolet photodetectors
1997
Deep acceptors in undoped GaN
1999
Investigations regarding the maskless pendeo-epitaxial growth of GaN films prior to coalescence
2002 StandoutNobel
Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
2010 StandoutNobel
Photoluminescence band near 2.9 eV in undoped GaN epitaxial layers
2000
Suppressing void defects in long wavelength semipolar (202¯1¯) InGaN quantum wells by growth rate optimization
2013 StandoutNobel
The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
1998 StandoutScienceNobel
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Vacancy Defects as Compensating Centers in Mg-Doped GaN
2003
Near-field investigation of spatial variations of (202¯1¯) InGaN quantum well emission spectra
2013 StandoutNobel
Polarity determination of a-plane GaN on r-plane sapphire and its effects on lateral overgrowth and heteroepitaxy
2003
Optical properties of InxGa1−xN alloys grown by metalorganic chemical vapor deposition
1998
Dependence of GaN polarity on the parameters of the buffer layer grown by molecular beam epitaxy
2001
GaN: Processing, defects, and devices
1999
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
2009 StandoutNobel
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Stacking faults and interface roughening in semipolar (202¯1¯) single InGaN quantum wells for long wavelength emission
2014 StandoutNobel
Reduction of dislocation density in heteroepitaxial GaN: role of SiH4 treatment
2004
Electrogenerated Chemiluminescence and Its Biorelated Applications
2008 Standout
Effect of nitridation on polarity, microstructure, and morphology of AlN films
2004 StandoutNobel
A review of photodetectors for sensing light-emitting reporters in biological systems
2003
Ordinary and extraordinary refractive indices for AlxGa1−xN epitaxial layers
1999
Comparison between structural properties of bulk GaN grown in liquid Ga under high N pressure and GaN grown by other methods
2002
Spatial variation of luminescence from AlGaN grown by facet controlled epitaxial lateral overgrowth
2004 StandoutNobel
Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
2011 StandoutNobel
Threading dislocation reduction via laterally overgrown nonpolar (1120) a-plane GaN
2002
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
2007 StandoutNobel
Electron-beam-induced optical memory effects in GaN
2002 StandoutNobel
Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth
1999
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Magnesium segregation and the formation of pyramidal defects in p-GaN
2002
Misorientation-angle dependence of GaN layers grown on a-plane sapphire substrates by metalorganic chemical vapor deposition
2001
Hexagonal-based pyramid void defects in GaN and InGaN
2012
III–Nitride UV Devices
2005
Quantum cryptography
2002 Standout
Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth
1999
The reduction of efficiency droop by Al0.82In0.18N/GaN superlattice electron blocking layer in (0001) oriented GaN-based light emitting diodes
2012 StandoutNobel
Reactive-ion-etched gallium nitride: Metastable defects and yellow luminescence
1999
High quality AlN grown on SiC by metal organic chemical vapor deposition
2008 StandoutNobel
Influence of high Mg doping on the microstructural and optoelectronic properties of GaN
2002
m -plane pure blue laser diodes with p-GaN/n-AlGaN-based asymmetric cladding and InGaN-based wave-guiding layers
2009 StandoutNobel
Partial strain relaxation by stacking fault generation in InGaN multiple quantum wells grown on (11¯01) semipolar GaN
2011 StandoutNobel
Atomic structure of pyramidal defects in Mg-doped GaN
2003
Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density
2001
Magnesium incorporation at (0001) inversion domain boundaries in GaN
2003
Substrates for gallium nitride epitaxy
2002
High gain GaN/AlGaN heterojunction phototransistor
1998
Photoresponse and Defect Levels of AlGaN/GaN Heterobipolar Phototransistor Grown on Low-Temperature AlN Interlayer
2001 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of C. J. Eiting being referenced
Current transport mechanisms in GaN-based metal–semiconductor–metal photodetectors
1998
Mg-doped GaN: Similar defects in bulk crystals and layers grown on Al2O3 by metal–organic chemical-vapor deposition
1999
High quantum efficiency metal-semiconductor-metalultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
1997
Very high-speed metal-semiconductor-metal ultraviolet photodetectors fabricated on GaN
1998
The effect of substrate misorientation on the optical, structural, and electrical properties of GaN grown on sapphire by MOCVD
1997
Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layers
1997
Growth of low resistivity p -type GaN bymetal organic chemical vapour deposition
1997
Ordering in bulk GaN:Mg samples: defects caused by Mg doping
1999
Optical data storage in InGaN/GaN heterostructures
1997
GaN avalanche photodiodes
2000
Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition
1997
Selective-area and lateral epitaxial overgrowth of III-N materials by metalorganic chemical vapor deposition
1998
TEM Study of Defects in Laterally Overgrown GaN Layers
1999
Selective-area and lateral epitaxial overgrowth of III–N materials by metal organic chemical vapor deposition
1998
Tem Study of Defects in Laterally Overgrown GaN Layers
1998
Characteristics of Mg‐Doped GaN Grown by Metallorganic Chemical Vapor Deposition
1997
Homoepitaxy of 6H-SiC by solid-source molecular beam epitaxy using C60 and Si effusion cells
2002
The effect of substrate misorientation on the photoluminescence properties of GaN grown on sapphire by metalorganic chemical vapor deposition
1996
Comprehensive characterization of metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN
1998
Photoluminescence and recombination mechanisms in GaN/Al0.2Ga0.8N superlattice
2000
P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition
1998
Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition
2000
Demonstration of a radiation resistant, high efficiency SiC betavoltaic
2006
Low dark current pin ultraviolet photodetectorsfabricated on GaN grown bymetal organic chemical vapour deposition
1998
High-speed pin ultraviolet photodetectorsfabricated on GaN
1998
Influence of Dopants on Defect Formation in GaN
2001