C. Dachs

Radiation-induced soft errors in advanced semiconductor technologies

Basic mechanisms and modeling of single-event upset in digital microelectronics

Low field leakage current and soft breakdown in ultra-thin gate oxides after heavy ions, electron or X-ray irradiation

Breakdown of gate oxides during irradiation with heavy ions

Precursor ion damage and angular dependence of single event gate rupture in thin oxides

Radiation Effects in MOS Oxides

Destructive single-event effects in semiconductor devices and ICs

Evidence of the ion's impact position effect on SEB in N-channel power MOSFETs

A physical interpretation for the single-event-gate-rupture cross-section of n-channel power MOSFETs

SEU critical charge and sensitive area in a submicron CMOS technology

SEGR and SEB in n-channel power MOSFETs