B. Khan

First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Fundamentals of zinc oxide as a semiconductor

Synthesis of oxide nanoparticles in low pressure flames

First-principles calculations for point defects in solids

Local vibrational mode spectroscopy of nitrogen-hydrogen complex in ZnSe

Field-effect mobility of polycrystalline tetrabenzoporphyrin thin-film transistors

Molecular nitrogen (N2−) acceptors and isolated nitrogen (N−) acceptors in ZnO crystals

Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies

A comprehensive review of ZnO materials and devices

Metal-based reactive nanomaterials

Polycrystalline silicon thin film transistors

Review of the anatase to rutile phase transformation

p-type doping with N and Li acceptors of ZnS grown by metalorganic vapor phase epitaxy

Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate

Semiconducting π-Conjugated Systems in Field-Effect Transistors: A Material Odyssey of Organic Electronics

Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy

Self-trapped exciton recombination in silicon nanocrystals

First-principles study of native point defects in ZnO

First-principles calculations for defects and impurities: Applications to III-nitrides

Transient photocurrent response in polycrystalline silicon thin films

Novel technique for p-type nitrogen doped ZnSe epitaxial layers

Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors

UV-Visible-IR Electroluminescence from Si and Ge Nanocrystals in a Wider Bandgap Matrix

Discrete donor-acceptor pair lines, two-hole excited states, and inelastic light scattering from nitrogen centers in zinc selenide epitaxial layers

Influence of the size dispersion on the emission spectra of the Si nanostructures