Standout Papers

Energy-dependant cyclotron mass in InAs/AlSb quantum wells 1994 2026 2004 2015 71
  1. Energy-dependant cyclotron mass in InAs/AlSb quantum wells (1994)
    C. Gauer, J. Scriba et al. Semiconductor Science and Technology
  2. Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field (1996)
    Richard J. Warburton, C. Gauer et al. Physical review. B, Condensed matter

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Works of B. Brar being referenced

SiO 2 film thickness metrology by x-ray photoelectron spectroscopy
1997
InAs/AlSb HEMT and Its Application to Ultra-Low-Power Wideband High-Gain Low-Noise Amplifiers
2006
An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier
2004
Design and characteristics of strained InAs/InAlAs composite-channel heterostructure field-effect transistors
2004
Interband impact ionization by terahertz illumination of InAs heterostructures
1996
A monolithic 4-bit 2-Gsps resonant tunneling analog-to-digital converter
1998
<tex>$hbox n^+$</tex>-InAs–InAlAs Recess Gate Technology for InAs-Channel Millimeter-Wave HFETs
2005
Intersubband resonances in InAs/AlSb quantum wells: Selection rules, matrix elements, and the depolarization field
1996 StandoutNobel
Electrical characteristics of high-quality sub-25-/spl Aring/ oxides grown by ultraviolet ozone exposure at low temperature
1999
Zero-field spin-splitting in InAs/AlSb quantum wells
1996 Nobel
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2026