Citation Impact
Citing Papers
Nanoparticles, Proteins, and Nucleic Acids: Biotechnology Meets Materials Science
2001 Standout
Optimization of material parameters in 1.3-μm InGaAsN-GaAs lasers
2003
Toward ultrahigh-efficiency aluminum oxide microcavity light-emitting diodes: guided mode extraction by photonic crystals
2002
Optical transitions in GaInNAs/GaAs multi-quantum wells with varying N content investigated by photoluminescence excitation spectroscopy
2003
Determining the band-structure of an InGaNAs/GaAs semiconductor laser structure using non-destructive photomodulated reflectance measurements and k·p studies
2002
Influence of polarization fields and depletion fields on photoluminescence of AlGaN/GaN multiple quantum well structures
2003 StandoutNobel
Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
2006 StandoutNobel
From N isoelectronic impurities to N-induced bands in the GaNxAs1−x alloy
2000
Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2007 Standout
Optical characterization of III-nitrides
2002 StandoutNobel
Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells
2002 StandoutNobel
High-power, wide-temperature range operation of 1.3-μm gain-coupled DFB lasers with automatically buried InAsP absorptive grating
1996
Emergence of colloidal quantum-dot light-emitting technologies
2012 StandoutNobel
Recent results and latest views on microcavity LEDs
2004 StandoutNobel
Directional emission control and increased light extraction in GaN photonic crystal light emitting diodes
2008 StandoutNobel
Optical Gain and Stimulated Emission in Nanocrystal Quantum Dots
2000 StandoutScienceNobel
GaN light-emitting diodes with Archimedean lattice photonic crystals
2006 StandoutNobel
Organic Semiconductor Lasers
2007 Standout
Experimental and theoretical investigations of optical properties of GaN/AlGaN MQW nanostructures. Impact of built-in polarization fields
2009 StandoutNobel
Dynamic properties of partly gain-coupled 1.55-μm DFB lasers
1995
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Electronic structure ofIn y Ga 1 − y As 1 − x N x / GaAs multiple quantum wells in the dilute-Nregime from pressure andk ⋅ p studies
2002
Enhanced modulation bandwidth for strain-compensated InGaAlAs-InGaAsP MQW lasers
1998 StandoutNobel
Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction
2005 StandoutNobel
Progress in Quantum Dot Lasers: 1100 nm, 1300 nm, and High Power Applications
2000 StandoutNobel
Group III-nitride based hetero and quantum structures
2000
On the origin of carrier localization in Ga1−xInxNyAs1−y/GaAs quantum wells
2001
Interband transitions of quantum wells and device structures containing Ga(N, As) and (Ga, In)(N, As)
2002
Mass Transport, Faceting and Behavior of Dislocations in GaN
2000 StandoutNobel
A Continuously Tunable Organic Solid-State Laser Based on a Flexible Distributed-Feedback Resonator
2003
Photoluminescence study of MOCVD-grown GaN/AlGaN MQW nanostructures: influence of Al composition and Si doping
2006 StandoutNobel
Derivation of a 10-band model for dilute nitride semiconductors
2003
Photoluminescence in n-doped In0.1Ga0.9N/In0.01Ga0.99N multiple quantum wells
2002 StandoutNobel
The present status of quantum dot lasers
1999
Band parameters for nitrogen-containing semiconductors
2003 Standout
Works of B. Borchert being referenced
Emission dynamics and optical gain of 1.3-μm (GaIn)(NAs)/GaAs lasers
2002
Spontaneous emission model of lateral light extraction from heterostructure light-emitting diodes
2000
Growth of high quality InGaAsN heterostructures and their laser application
2001
Low threshold lasing operation of narrow stripeoxide-confinedGaInNAs/GaAs multiquantum well lasers at 1.28 µm
2000
1.55 mu m gain-coupled quantum-well distributed feedback lasers with high single-mode yield and narrow linewidth
1991
Reduced threshold current densities of (GaIn)(NAs)/GaAssingle quantum welllasers for emission wavelengths in the range 1.28 – 1.38 µm
1999
Fabrication and characteristics of improved strained quantum-well GaInAlAs gain-coupled DFB lasers
1993
InGaAsN/GaAs heterostructures for long-wavelength light-emitting devices
2000
1.29 µm GaInNAs multiple quantum-well ridge-waveguidelaser diodes with improved performance
1999
Tunable twin-guide (TTG) distributed feedback (DFB) laser with over 10 nm continuous tuning range
1993
Gain spectra of (GaIn)(NAs) laser diodes for the 1.3-μm-wavelength regime
2001