Standout Papers

Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode 2005 2026 2012 2019 548
  1. Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode (2005)
    Rajat Sharma, P. Morgan Pattison et al. Applied Physics Letters
  2. Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates (2005)
    Arpan Chakraborty, B. A. Haskell et al. Japanese Journal of Applied Physics
  3. Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation (2006)
    Arpan Chakraborty, B. A. Haskell et al. Japanese Journal of Applied Physics
  4. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors (2006)
    Shigefusa F. Chichibu, Akira Uedono et al. Nature Materials
  5. Optical properties of nonpolar -plane GaN layers (2006)
    T. Paskova, T. Paskova et al. Superlattices and Microstructures
  6. Microscopic emission properties of nonpolar a -plane GaN grown by HVPE (2006)
    T. Paskova, T. Paskova et al. Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
  7. Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates (2006)
    Troy J. Baker, B. A. Haskell et al. Japanese Journal of Applied Physics
  8. Characterization of nanoscale electronic structure in nonpolar GaN using scanning capacitance microscopy (2008)
    Edward T. Yu, B. A. Haskell et al. Journal of Applied Physics
  9. Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques (2007)
    Shigefusa F. Chichibu, Akira Uedono et al. The Philosophical Magazine A Journal of Theoretical Experimental and Applied Physics
  10. Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy (2005)
    B. A. Haskell, Arpan Chakraborty et al. Journal of Electronic Materials
  11. Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates (2005)
    Arpan Chakraborty, Troy J. Baker et al. Japanese Journal of Applied Physics
  12. Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy (2005)
    B. A. Haskell, Troy J. Baker et al. Applied Physics Letters
  13. Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia (2005)
    Tadao Hashimoto, Kenji Fujito et al. Japanese Journal of Applied Physics
  14. Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia (2004)
    Tadao Hashimoto, Kenji Fujito et al. MRS Proceedings
  15. Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN (2006)
    Arpan Chakraborty, Feng Wu et al. Japanese Journal of Applied Physics
  16. Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques (2005)
    Shigefusa F. Chichibu, Akira Uedono et al. Applied Physics Letters
  17. Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2005)
    Takeyoshi Onuma, A. Chakraborty et al. Applied Physics Letters
  18. Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate (2005)
    Hisashi Masui, Arpan Chakraborty et al. Japanese Journal of Applied Physics
  19. Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates (2005)
    Troy J. Baker, B. A. Haskell et al. Japanese Journal of Applied Physics
  20. Effect of anisotropic strain on phonons in a-plane and c-plane GaN layers (2006)
    Vanya Darakchieva, T. Paskova et al. Journal of Crystal Growth
  21. Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth (2004)
    Takashi Koida, Shigefusa F. Chichibu et al. Applied Physics Letters
  22. Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak (2004)
    Arpan Chakraborty, B. A. Haskell et al. Applied Physics Letters
  23. Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy (2003)
    B. A. Haskell, Feng Wu et al. Applied Physics Letters
  24. Gallium adsorption onto (1120) gallium nitride surfaces (2004)
    Melvin McLaurin, B. A. Haskell et al. Journal of Applied Physics
  25. Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy (2003)
    B. A. Haskell, Feng Wu et al. Applied Physics Letters
  26. Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy (2006)
    Yuan Wu, B. A. Haskell et al. Journal of Crystal Growth
  27. Intensity dependent time‐resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a‐plane and planar c‐plane GaN (2005)
    Gregory A. Garrett, H. Shen et al. physica status solidi (a)
  28. Photoluminescence of a ‐plane GaN: comparison between MOCVD and HVPE grown layers (2006)
    T. Paskova, R. Schifano et al. Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
  29. Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates (2006)
    T. Koyama, Takeyoshi Onuma et al. Applied Physics Letters
  30. Stress and wafer bending of a-plane GaN layers on r-plane sapphire substrates (2006)
    C. Roder, S. Einfeldt et al. Journal of Applied Physics
  31. Growth of gallium nitride via fluid transport in supercritical ammonia (2004)
    Tadao Hashimoto, Kenji Fujito et al. Journal of Crystal Growth
  32. Defect-mediated surface morphology of nonpolar m-plane GaN (2007)
    B. A. Haskell, Melvin McLaurin et al. Applied Physics Letters
  33. Progress in the growth of nonpolar gallium nitride (2007)
    B. A. Haskell, Shuji Nakamura et al. physica status solidi (b)
  34. Anisotropic strain and phonon deformation potentials in GaN (2007)
    Vanya Darakchieva, T. Paskova et al. Physical Review B
  35. Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN (2005)
    Arpan Chakraborty, S. Keller et al. Applied Physics Letters
  36. Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth (2007)
    Takeyoshi Onuma, T. Koyama et al. Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Citation Impact

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Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
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Improved electroluminescence on nonpolar m ‐plane InGaN/GaN quantum wells LEDs
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Optical properties of yellow light-emitting diodes grown on semipolar (112¯2) bulk GaN substrates
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The emergence and prospects of deep-ultraviolet light-emitting diode technologies
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Optical properties of a-plane InGaN/GaN multiple quantum wells on r-plane sapphire substrates with different indium compositions
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Temperature dependence of polarized electroluminescence from nonpolar m-plane InGaN-based light emitting diodes
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High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
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Compositional Dependence of Nonpolarm-Plane InxGa1-xN/GaN Light Emitting Diodes
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Comparison of InGaN/GaN light emitting diodes grown on m ‐plane and a ‐plane bulk GaN substrates
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Non‐polar‐oriented InGaN light‐emitting diodes for liquid‐crystal‐display backlighting
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Depolarization effects in (112¯2)-oriented InGaN∕GaN quantum well structures
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Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material
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Semipolar (1011) InGaN/GaN Laser Diodes on Bulk GaN Substrates
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Quantum-confined Stark effects in the m-plane In0.15Ga0.85N∕GaN multiple quantum well blue light-emitting diode fabricated on low defect density freestanding GaN substrate
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Continuous-Wave Operation of Blue Laser Diodes Based on Nonpolarm-Plane Gallium Nitride
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Optical properties of extended and localized states in m-plane InGaN quantum wells
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Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes
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Characterization of blue-green m-plane InGaN light emitting diodes
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High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates
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Evaluation of GaN substrates grown in supercritical basic ammonia
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First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes
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Improved characteristics and issues of m-plane InGaN films grown on low defect density m-plane freestanding GaN substrates by metalorganic vapor phase epitaxy
2008
Enhancing the Light Extraction Efficiency of Blue Semipolar (1011) Nitride-Based Light Emitting Diodes through Surface Patterning
2009 StandoutNobel
Excitonic properties of polar, semipolar, and nonpolar InGaN∕GaN strained quantum wells with potential fluctuations
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Improved quality (112¯0)a-plane GaN with sidewall lateral epitaxial overgrowth
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Molecular-beam epitaxy of p-type m-plane GaN
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Nonpolar and Semipolar Group III Nitride-Based Materials
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Demonstration of 426 nm InGaN/GaN Laser Diodes Fabricated on Free-Standing Semipolar (11\bar22) Gallium Nitride Substrates
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Photoluminescence and positron annihilation studies on Mg-doped nitrogen-polarity semipolar (101¯1¯) GaN heteroepitaxial layers grown by metalorganic vapor phase epitaxy
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m-Plane GaInN Light Emitting Diodes Grown on Patterneda-Plane Sapphire Substrates
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Customized Filter Cube in Fluorescence Microscope Measurements of InGaN/GaN Quantum-Well Characterization
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Growth of p-type and n-type m-plane GaN by molecular beam epitaxy
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Determination of polarization field in a semipolar (112¯2) InGa∕GaN single quantum well using Franz–Keldysh oscillations in electroreflectance
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Green light emitting diodes on a-plane GaN bulk substrates
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Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (112¯2)-plane GaN
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Semi‐polar nitride surfaces and heterostructures
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Theoretical investigations on anisotropic optical properties in semipolar and nonpolar InGaN quantum wells
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Optical polarization characteristics ofm-oriented InGaN/GaN light-emitting diodes with various indium compositions in single-quantum-well structure
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Ammonothermal Growth of GaN on an over-1-inch Seed Crystal
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Intrinsic photoluminescence of M-plane GaN films on LiAlO2 substrates
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Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
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Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0  \bar1  0) and semipolar (1 1  \bar{2}  2) orientations
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Auger recombination in InGaN measured by photoluminescence
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Properties and potential optoelectronic applications of lead halide perovskite nanocrystals
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Phase selection of microcrystalline GaN synthesized in supercritical ammonia
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Characteristics of Polarized Electroluminescence from m-plane InGaN-based Light Emitting Diodes
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Increased Polarization Ratio on Semipolar (1122) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition
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Experimental technique to correlate optical excitation intensities with electrical excitation intensities for semiconductor optoelectronic device characterization
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Photoelectrochemical Properties of Nonpolar and Semipolar GaN
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Anisotropic optical matrix elements in strained GaN‐quantum wells with various substrate orientations
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Status and perspectives of the ammonothermal growth of GaN substrates
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Strain-induced polarization in wurtzite III-nitride semipolar layers
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Direct correlation between nonradiative recombination centers and threading dislocations in InGaN quantum wells by near‐field photoluminescence spectroscopy
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Polarization switching phenomena in semipolarInxGa1−xN/GaNquantum well active layers
2008
Improved semipolar (112¯2) GaN quality using asymmetric lateral epitaxy
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Basal plane misfit dislocations and stress relaxation in III-nitride semipolar heteroepitaxy
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Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region
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A 342-nm ultraviolet AlGaN multiple-quantum-well laser diode
2008
Strong Emission from GaInN/GaN Multiple Quantum Wells on High-Crystalline-Quality Thickm-Plane GaInN Underlying Layer on Grooved GaN
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Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy
2007 StandoutNobel
Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes
2008 StandoutNobel
Fabrication and properties of semi‐polar (1‐101) and (11‐22) InGaN/GaN light emitting diodes on patterned Si substrates
2008
Visible light-emitting diodes using a-plane GaN–InGaN multiple quantum wells over r-plane sapphire
2004
GaN-Based Light-Emitting Diodes: Efficiency at High Injection Levels
2010
Nonpolar and Semipolar Orientations: Material Growth and Properties
2008 Nobel
Polarized light emission from semipolar GaInN quantum wells on {11¯01} GaN facets
2007
Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395to455nm
2007
High power and high efficiency blue light emitting diode on freestanding semipolar (101¯1¯) bulk GaN substrate
2007 StandoutNobel
Bright semipolar GaInN∕GaN blue light emitting diode on side facets of selectively grown GaN stripes
2006
High‐quality nonpolar m ‐plane GaN substrates grown by HVPE
2008
Stability of (1100) m-Plane GaN Films Grown by Metalorganic Chemical Vapor Deposition
2006
Optical polarization characteristics of InGaN∕GaN light-emitting diodes fabricated on GaN substrates oriented between (101¯) and (101¯1¯) planes
2008 StandoutNobel
Dislocation-Free m-Plane InGaN/GaN Light-Emitting Diodes on m-Plane GaN Single Crystals
2006
Ammonothermal Epitaxy of Thick GaN Film Using NH4Cl Mineralizer
2006
531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates
2009
Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates
2006
Geometrical Characteristics and Surface Polarity of Inclined Crystallographic Planes of the Wurtzite and Zincblende Structures
2009 StandoutNobel
In‐plane polarization of GaN‐based heterostructures with arbitrary crystal orientation
2010
Demonstration of Nonpolar m-Plane InGaN/GaN Laser Diodes
2007 StandoutNobel
Anisotropic Optical Matrix Elements in Strained GaN Quantum Wells on Semipolar and Nonpolar Substrates
2007
High power and high efficiency green light emitting diode on free‐standing semipolar (11$ \bar 2 $2) bulk GaN substrate
2007 StandoutNobel
Continuous-Wave Operation of m-Plane InGaN Multiple Quantum Well Laser Diodes
2007
Bulk ammonothermal GaN
2009
Effects of off-axis GaN substrates on optical properties of m-plane InGaN/GaN light-emitting diodes
2008 StandoutNobel

Works of B. A. Haskell being referenced

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Gallium adsorption onto (1120) gallium nitride surfaces
2004 StandoutNobel
Ammonothermal growth of GaN utilizing negative temperature dependence of solubility in basic ammonia
2004 StandoutNobel
Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode
2005 StandoutNobel
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN
2006 StandoutNobel
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia
2005 StandoutNobel
Intensity dependent time‐resolved photoluminescence studies of GaN/AlGaN multiple quantum wells of varying well width on laterally overgrown a‐plane and planar c‐plane GaN
2005 StandoutNobel
Direct heteroepitaxial growth of thick AlN layers on sapphire substrates by hydride vapor phase epitaxy
2006 StandoutNobel
Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
2003 StandoutNobel
Structural and Optical Properties of Nonpolar InGaN/GaN Multiple Quantum Wells Grown on Planar and Lateral Epitaxially Overgrown m-Plane GaN Films
2007 Nobel
Improved quantum efficiency in nonpolar (1120) AlGaN/GaN quantum wells grown on GaN prepared by lateral epitaxial overgrowth
2004 StandoutNobel
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Characterization of Planar Semipolar Gallium Nitride Films on Spinel Substrates
2005 StandoutNobel
Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
2007 StandoutNobel
Growth of gallium nitride via fluid transport in supercritical ammonia
2004 StandoutNobel
Polarized Light Emission from Nonpolar InGaN Light-Emitting Diodes Grown on a Bulk m-Plane GaN Substrate
2005 StandoutNobel
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
Defect reduction in (11¯00) m-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor phase epitaxy
2005 StandoutNobel
Properties of nonpolar a-plane InGaN∕GaN multiple quantum wells grown on lateral epitaxially overgrown a-plane GaN
2005 StandoutNobel
Progress in the growth of nonpolar gallium nitride
2007 StandoutNobel
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
Characterization of Planar Semipolar Gallium Nitride Films on Sapphire Substrates
2006 StandoutNobel
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Structural and morphological characteristics of planar (1120) a-plane gallium nitride grown by hydride vapor phase epitaxy
2003 StandoutNobel
Radiative and nonradiative lifetimes in nonpolar m-plane InxGa1−xN∕GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2007 StandoutNobel
Microstructure and enhanced morphology of planar nonpolar m-plane GaN grown by hydride vapor phase epitaxy
2005 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
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