Citation Impact
Citing Papers
Epitaxial growth of II–VI compound semiconductors by atomic layer epitaxy
1998
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Carrier-envelope phase stabilization of a multi-millijoule, regenerative-amplifier-based chirped-pulse smplifier dystem
2009 StandoutNobel
Mie Resonances, Infrared Emission, and the Band Gap of InN
2004 StandoutNobel
Platinum single-atom and cluster catalysis of the hydrogen evolution reaction
2016 Standout
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Surface reaction mechanism in MOMBE-ALE of ZnSe and CdSe as determined by a new in-situ optical probing method
1994
Growth of ZnSxSe1−x layers on Si substrates by atomic layer epitaxy
1999
Near band-edge optical properties of cubic GaN with and without carbon doping
2003
Quantum Dots and Their Multimodal Applications: A Review
2010
Low-temperature, chemically driven atomic-layer epitaxy: In situ monitored growth of CdS/ZnSe(100)
1997
Epitaxial Stabilization of Oxides in Thin Films
2002
Physics of thin-film ferroelectric oxides
2005 Standout
First-principles calculations for point defects in solids
2014 Standout
Effect of Atomic Layer Epitaxy Growth Conditions on the Properties of ZnS Epilayers on (100)-Si Substrate
1996
Influence of InN mole fraction on the recombination processes of localized excitons in strained cubic InxGa1−xN/GaN multiple quantum wells
2003 StandoutNobel
Atomic Layer Epitaxy of ZnS by Low-Pressure Horizontal Metalorganic Chemical Vapor Deposition
1996
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Indium nitride (InN): A review on growth, characterization, and properties
2003
Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures
2005
Nanoparticles for photothermal therapies
2014 Standout
Luminescence properties of defects in GaN
2005 Standout
Large-band-gap SiC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies
1994 Standout
Nanozymes: Classification, Catalytic Mechanisms, Activity Regulation, and Applications
2019 Standout
Atomic Layer Deposition Functionalized Composite SOFC Cathode La0.6Sr0.4Fe0.8Co0.2O3-δ -Gd0.2Ce0.8O1.9: Enhanced Long-Term Stability
2013 StandoutNobel
Photoluminescence properties of ZnSe single crystalline films grown by atomic layer epitaxy
1986
Localized exciton dynamics in nonpolar (112¯) InxGa1−xN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth
2005 StandoutNobel
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Monitoring of CdTe atomic layer epitaxy using in-situ spectroscopic ellipsometry
1998
Linear Absorption in CdSe Nanoplates: Thickness and Lateral Size Dependency of the Intrinsic Absorption
2015
High quantum efficiency InGaN/GaN multiple quantum well solar cells with spectral response extending out to 520 nm
2011 StandoutNobel
Nitrogen-polar GaN growth evolution on c-plane sapphire
2008
GaInN-Based Tunnel Junctions in n–p–n Light Emitting Diodes
2013 StandoutNobel
Shubinaet al.Reply:
2004 StandoutNobel
Renewable energy resources: Current status, future prospects and their enabling technology
2014 Standout
Atomic Layer Deposition: An Overview
2009 Standout
Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
2006
Luminescence Characteristics of N-Polar GaN and InGaN Films Grown by Metal Organic Chemical Vapor Deposition
2009 StandoutNobel
GaN based nanorods for solid state lighting
2012
A facile strategy to prepare porphyrin functionalized ZnS nanoparticles and their peroxidase-like catalytic activity for colorimetric sensor of hydrogen peroxide and glucose
2017
ZnSe p-n junctions produced by metalorganic molecular-beam epitaxy
1990
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
Characterization of p-type ZnSe
1990
The Effect of Lattice Misfit on Lattice Parameters and Photoluminescence Properties of Atomic Layer Epitaxy Grown ZnSe on (100)GaAs Substrates
1986
Nanoscopic recombination processes in InGaN/GaN quantum wells emitting violet, blue, and green spectra
2008
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
2006 StandoutNobel
Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate
2003 StandoutNobel
Studies of heteroepitaxial growth of thin II–VI semiconductor layers by sequential ultrahigh vacuum dosing
2000
Hall mobility and carrier concentration in free-standing high quality GaN templates grown by hydride vapor phase epitaxy
2001
Nanomaterials with enzyme-like characteristics (nanozymes): next-generation artificial enzymes (II)
2018 Standout
Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process
2005 Standout
Blue-green laser diodes
1991 Standout
InGaN Solar Cells: Present State of the Art and Important Challenges
2012
Defect-mediated surface morphology of nonpolar m-plane GaN
2007 StandoutNobel
GaN Nanowires Grown on a Graphite Substrate by Radio Frequency Molecular Beam Epitaxy
2013 StandoutNobel
All-inorganic quantum-dot light-emitting devices formed via low-cost, wet-chemical processing
2009
Atomic layer epitaxial growth studies of ZnSe using dimethylzinc and hydrogen selenide
1994
How to grow cubic GaN with low hexagonal phase content on (001) SiC by molecular beam epitaxy
1998
Atomic layer deposition of ZnS thin films based on diethyl zinc and hydrogen sulfide
2002
Atomic layer epitaxy of ZnS by a new gas supplying system in low-pressure metalorganic vapor phase epitaxy
1992
Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges
2009 StandoutNobel
Effect of intentional p-GaN surface roughening on the performance of InGaN/GaN solar cells
2013 StandoutNobel
Evaluation of Zn{N[Si(CH3)3]2}2 as ap-type dopant in OMVPE growth of ZnSe
1992
Effect of quantum well cap layer thickness on the microstructure and performance of InGaN/GaN solar cells
2012 StandoutNobel
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
2013 StandoutNobel
Thermoelectric properties of lattice matched InAlN on semi-insulating GaN templates
2012 StandoutNobel
Resistivity control in unintentionally doped GaN films grown by MOCVD
2003
Growth of In‐polar and N‐polar InN nanocolumns on GaN templates by molecular beam epitaxy
2006
Band gap bowing and exciton localization in strained cubic InxGa1−xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy
2001
Hybrid functional investigations of band gaps and band alignments for AlN, GaN, InN, and InGaN
2011
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Effects of exciton localization on internal quantum efficiency of InGaN nanowires
2013 StandoutNobel
Visible-light driven heterojunction photocatalysts for water splitting – a critical review
2015 Standout
Polarization-engineered GaN/InGaN/GaN tunnel diodes
2010
Prospective emission efficiency and in-plane light polarization of nonpolar m-plane InxGa1−xN∕GaN blue light emitting diodes fabricated on freestanding GaN substrates
2006 StandoutNobel
Carrier redistribution between different potential sites in semipolar (202¯1) InGaN quantum wells studied by near-field photoluminescence
2014 StandoutNobel
Review of polarity determination and control of GaN
2004
High-efficiency quantum-dot light-emitting devices with enhanced charge injection
2013 StandoutNobel
Energy position of near-band-edge emission spectra of InN epitaxial layers with different doping levels
2004 StandoutNobel
Reduced Defect Densities in Cubic GaN Epilayers with AlGaN/GaN Superlattice Underlayers Grown on (001) GaAs Substrates by Metalorganic Vapor Phase Epitaxy
2004
High temperature thermoelectric properties of optimized InGaN
2011 StandoutNobel
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
2007
Growth of Fe doped semi-insulating GaN by metalorganic chemical vapor deposition
2002
When group-III nitrides go infrared: New properties and perspectives
2009
Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells
2001
Advanced Nanoarchitectures for Solar Photocatalytic Applications
2011 Standout
Optical excitations in electron microscopy
2010 Standout
N-polar GaN∕AlGaN∕GaN high electron mobility transistors
2007
Controlled Assembly and Anomalous Thermal Expansion of Ultrathin Cesium Lead Bromide Nanoplatelets
2023 StandoutNobel
Contactless electroreflectance of InGaN layers with indium content ≤36%: The surface band bending, band gap bowing, and Stokes shift issues
2009
Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy
2004
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Optical properties and applications of hybrid semiconductor nanomaterials
2009
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Atomic layer epitaxy of ZnSe on GaAs(100) by metalorganic molecular beam epitaxy
1992
Molecular Beam Epitaxy Growth of Single-Domain and High-Quality ZnO Layers on Nitrided (0001) Sapphire Surface
2003
In situ X-ray investigation of changing barrier growth temperatures on InGaN single quantum wells in metal-organic vapor phase epitaxy
2014 StandoutNobel
Works of A. Yoshikawa being referenced
Comparative study of InN growth on Ga‐ and N‐polarity GaN templates by molecular‐beam epitaxy
2003
Proposal and achievement of novel structure InN∕GaN multiple quantum wells consisting of 1 ML and fractional monolayer InN wells inserted in GaN matrix
2007
Phonon lifetimes and phonon decay in InN
2005
Luminescence properties of CdS quantum dots on ZnSe
1999
Bright electroluminescence from CdS quantum dotLED structures
1998
The dependence on growth temperature of the photoluminescence properties of nitrogen-doped ZnSe grown by MOCVD
1988
Effects of film polarities on InN growth by molecular-beam epitaxy
2003
Growth Kinetics in MOMBE‐ALE of ZnSe and CdSe as Determined by a New In‐Situ Optical Probing Method
1995
A study of growth mechanism of ZnS and ZnSe in MOMBE using dimethylzinc and chalcogen hydrides as reactants
1989
Growth of hexagonal ZnCdS on GaAs(1 1 1)B and (0 0 1) substrates by MBE
2000
High-Resolution X-Ray Diffraction Analysis of “Devicequality” Cubic GaN Grown on (001)GaAs Substrate Prepared by Atomic-Hydrogen Treatment At “High Temperatures”
1997
“MBE-Like” and “CVD-like” atomic layer epitaxy of ZnSe in mombe system
1990
Conductive layer near the GaN/sapphire interface and its effect on electron transport in unintentionally doped n-type GaN epilayers
2000
Bowing of the band gap pressure coefficient in InxGa1−xN alloys
2008
Molecular beam epitaxy of CdS self-assembled quantum dots on ZnSe
1998
Influence of strain on the band gap energy of wurtzite InN
2009
Cubic InGaN/GaN Double-Heterostructure Light Emitting Diodes Grown on GaAs (001) Substrates by MOVPE
2000
In-situ probing of the ZnSe metalorganic molecular beam epitaxy growth process by surface photo-interference method
1994
Kinetic Process of Polarity Selection in GaN Growth by RF-MBE
2001
Lattice polarity detection of InN by circular photogalvanic effect
2009
Bandgap energy of InN and its temperature dependence
2005
Growth of InN quantum dots on N-polarity GaN by molecular-beam epitaxy
2005
Electrical and optical properties of donor doped ZnS films grown by low-pressure MOCVD
1988
Step‐Flow Growth of InN on N‐Polarity GaN Template by Molecular Beam Epitaxy with a Growth Rate of 1.3 μm/h
2002
Growth of low-resistivity high-quality ZnSe, ZnS films by low-pressure metalorganic chemical vapour deposition
1985
Spectroscopic Ellipsometry in-situ Monitoring/Control of GaN Epitaxial Growth in MBE and MOVPE
2002