Standout Papers
- Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency (2011)
- Electrical properties and deep traps spectra in undoped M-plane GaN films prepared by standard MOCVD and by selective lateral overgrowth (2009)
- Electrical properties and deep traps spectra in undoped and Si-doped m-plane GaN films (2009)
Citation Impact
Citing Papers
Conformal piezoelectric energy harvesting and storage from motions of the heart, lung, and diaphragm
2014 Standout
Solar-to-hydrogen efficiency of more than 9% in photocatalytic water splitting
2023 StandoutNature
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Perovskite solar cells with atomically coherent interlayers on SnO2 electrodes
2021 StandoutNature
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
2018 StandoutNature
Surface tuning for oxide-based nanomaterials as efficient photocatalysts
2013
Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2
2013
Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices
2001 StandoutNature
Dependence of Resonance Energy Transfer on Exciton Dimensionality
2011 StandoutNobel
The roles of photo-carrier doping and driving wavelength in high harmonic generation from a semiconductor
2017 StandoutNobel
Carrier localization in m-plane InGaN/GaN quantum wells probed by scanning near field optical spectroscopy
2010 StandoutNobel
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
2001 StandoutNobel
Remote hydrogen plasma doping of single crystal ZnO
2004
Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hours
1997 StandoutNobel
Cationic and Anionic Surface Binding Sites on Nanocrystalline Zinc Oxide: Surface Influence on Photoluminescence and Photocatalysis
2009
Antimonide-based compound semiconductors for electronic devices: A review
2005
Luminescence properties of defects in GaN
2005 Standout
Metalorganic chemical vapor deposition of high mobility AlGaN/GaN heterostructures
1999
Low extended defect density nonpolar m-plane GaN by sidewall lateral epitaxial overgrowth
2008 StandoutNobel
Wide band gap ferromagnetic semiconductors and oxides
2002
Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning
2004
Photoexcited carrier recombination in wide m-plane InGaN/GaN quantum wells
2013 StandoutNobel
Contacts to p-type ZnMgO
2004
The doping process and dopant characteristics of GaN
2002
Spintronics: Fundamentals and applications
2004 Standout
Recombination dynamics of a 268nm emission peak in Al0.53In0.11Ga0.36N∕Al0.58In0.02Ga0.40N multiple quantum wells
2006 StandoutNobel
Non-polar m-plane intersubband based InGaN/(Al)GaN quantum well infrared photodetectors
2013 StandoutNobel
Hole Compensation Mechanism of P-Type GaN Films
1992 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Recent advances in Schottky barrier concepts
2001
Substitutional and interstitial carbon in wurtzite GaN
2002
Quality and thermal stability of thin InGaN films
2009
Thermoreflectance study of the direct energy gap of GaSb
1997
A reflectance anisotropy spectroscopy study of GaSb(100)c(2 × 6) surfaces prepared by Sb decapping
1996 StandoutNobel
Polarization anisotropy in GaN films for different nonpolar orientations studied by polarized photoreflectance spectroscopy
2006 StandoutNobel
Chemical origin of the yellow luminescence in GaN
2002
Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN
2002
Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces
2012 Standout
Investigation of optical metastability in GaN using photoluminescence spectroscopy
2003
Wide bandgap GaN-based semiconductors for spintronics
2004
Growth of AlGaN/GaN heterojunction field effect transistors on semi-insulating GaN using an AlGaN interlayer
2009 StandoutNobel
High conductivity modulation doped AlGaN/GaN multiple channel heterostructures
2003
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
1994 StandoutNobel
One-Dimensional Electrical Contact to a Two-Dimensional Material
2013 StandoutScience
Defect and Contact Passivation for Perovskite Solar Cells
2019
Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO
2004
Time-resolved luminescence studies of proton-implanted GaN
2009
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Analysis of the temperature and excitation intensity dependencies of photoluminescence in undoped GaN films
2001
Photoluminescence of carbon in situ doped GaN grown by halide vapor phase epitaxy
1998
SIMS investigations into the effect of growth conditions on residual impurity and silicon incorporation in GaN and AlxGa1−xN
2000
Polydopamine and Its Derivative Materials: Synthesis and Promising Applications in Energy, Environmental, and Biomedical Fields
2014 Standout
Evidence for localized Si-donor state and its metastable properties in AlGaN
1999 StandoutNobel
Band Discontinuities of Perfectly Lattice-Matched GaSb(n)/GaAlAsSb(p)/GaSb(p) Double Heterojunction
1997
Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications
1999
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Chalcogenide passivation of III–V semiconductor surfaces
1998
Microscopic structure of GaSb(001) c(2×6) surfaces prepared by Sb decapping of MBE-grown samples
1997 StandoutNobel
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
2014 StandoutNobel
GaN: Processing, defects, and devices
1999
Electrical and structural properties of AlGaN/AlGaN superlattice structures grown by metal-organic chemical vapor deposition
2003
Research opportunities to advance solar energy utilization
2016 StandoutScience
Highly polarized photoluminescence and its dynamics in semipolar (202¯1¯) InGaN/GaN quantum well
2014 StandoutNobel
Optical characterization and room temperature lifetime measurements of high quality MBE-grown InAsSb on GaSb
1999
Crystallographic orientation dependence of dopant and impurity incorporation in GaN films grown by metalorganic chemical vapor deposition
2009
High-power InGaN/GaN double-heterostructure violet light emitting diodes
1993 StandoutNobel
Origin of pyramidal hillocks on GaN thin films grown on free-standing m-plane GaN substrates
2010 StandoutNobel
Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions
2013 StandoutNobel
Graphitic Carbon Nitride (g-C3N4)-Based Photocatalysts for Artificial Photosynthesis and Environmental Remediation: Are We a Step Closer To Achieving Sustainability?
2016 Standout
Thermoreflectance study of the direct optical gap in epitaxialAl x Ga 1 − x Sb ( x <~ 0 . 5 )
1999
The physics and chemistry of the Schottky barrier height
2014
Effect of hydrogen peroxide treatment on the characteristics of Pt Schottky contact on n-type ZnO
2005
Contributions from gallium vacancies and carbon-related defects to the “yellow luminescence” in GaN
2003
High-Efficiency Perovskite Solar Cells
2020 Standout
Energy band bowing parameter in AlxGa1−xN alloys
2002
p-type conduction in Mg-doped GaN and Al0.08Ga0.92N grown by metalorganic vapor phase epitaxy
1994 StandoutNobel
Carbon doping of GaN with CBr4 in radio-frequency plasma-assisted molecular beam epitaxy
2004
The physics and technology of gallium antimonide: An emerging optoelectronic material
1997
Cocatalysts for Selective Photoreduction of CO2into Solar Fuels
2019 Standout
Bifunctional Au@TiO2 core–shell nanoparticle films for clean water generation by photocatalysis and solar evaporation
2016
Strain-induced polarization in wurtzite III-nitride semipolar layers
2006 StandoutNobel
Role of carbon in GaN
2002
Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO
2004
Defect Activity in Lead Halide Perovskites
2019
Indium-tin-oxide clad blue and true green semipolar InGaN/GaN laser diodes
2013 StandoutNobel
Compositionally graded relaxed AlGaN buffers on semipolar GaN for mid-ultraviolet emission
2012 StandoutNobel
Biaxial strain in AlxGa1−xN/GaN layers deposited on 6H-SiC
1998 StandoutNobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Ga vacancies as dominant intrinsic acceptors in GaN grown by hydride vapor phase epitaxy
2003
Direct- and indirect-energy-gap dependence on Al concentration inAl x Ga 1 − x Sb ( x <~ 0 . 4 1 )
1998
InGaN‐based blue/green LEDs and laser diodes
1996 StandoutNobel
Carrier concentration dependence of Ti/Al/Pt/Au contact resistance on n-type ZnO
2004
Low-energy electron-beam irradiation and yellow luminescence in activated Mg-doped GaN
2003
Photothermal Nanomaterials: A Powerful Light-to-Heat Converter
2023 Standout
Flexible High-Output Nanogenerator Based on Lateral ZnO Nanowire Array
2010
Band parameters for nitrogen-containing semiconductors
2003 Standout
Defect-Related Donors, Acceptors, and Traps in GaN
2001
Dissociation of H-related defect complexes in Mg-doped GaN
2004
Phase separation and gap bowing in zinc-blende InGaN, InAlN, BGaN, and BAlN alloy layers
2002
Energy bandgap of AlxGa1−xAs1−ySby and conduction band discontinuity of AlxGa1−xAs1−ySby/InAs and AlxGa1−xAs1−ySby/InGaAs heterostructures
1998
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
The band-gap bowing of AlxGa1−xN alloys
1999
Works of A. Y. Polyakov being referenced
Effects of proton implantation on electrical and recombination properties of n-GaN
2000
Schottky barriers of various metals on Al0.5Ga0.5As0.05Sb0.95 and the influence of hydrogen and sulfur treatments on their properties
1992
Hydrogen Passivation of Donors and Acceptors in InP
1989
Hydrogen treatment effect on shallow and deep centers in GaSb
1992
Deep traps and enhanced photoluminescence efficiency in nonpolar a-GaN/InGaN quantum well structures
2012
Electronic states in modulation doped p-AlGaN/GaN superlattices
2001
Properties of Au and Ag Schottky diodes prepared on undoped n-ZnO
2003
The Influence of Hydrogen Plasma Passivation on Electrical and Optical Properties of Aigan Samples Grown on Sapphire
1996
Indium arsenide: a semiconductor for high speed and electro-optical devices
1993
Investigation of Optical and Structural Stability of Localized Surface Plasmon Mediated Light‐Emitting Diodes by Ag and Ag/SiO2 Nanoparticles
2012
Proton implantation effects on electrical and recombination properties of undoped ZnO
2003
Electrical and optical properties of modulation-doped p-AlGaN/GaN superlattices
2001
Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO
2003
The properties of heavily compensated high resistivity GaSb crystals
1994
Hydrogen and nitrogen plasma treatment effects on surface properties of GaSb and InGaAsSb
1995
Characterization of High Dose Mn, Fe, and Ni implantation into p-GaN
2002
Gallium antimonide device related properties
1993
High-resistivity GaSb grown by molecular-beam epitaxy
1992
Band offsets in GaSb/AlGaAsSb: Correlation with the Schottky barrier height and the depth of native acceptors
1993
Role of nonradiative recombination centers and extended defects in nonpolar GaN on light emission efficiency
2011 StandoutNobel
On the origin of electrically active defects in AlGaN alloys grown by organometallic vapor phase epitaxy
1996
Deep hole traps in n-GaN films grown by hydride vapor phase epitaxy
2002
Ion implantation of Si, Mg and C into Al0.12Ga0.88N
1997
Factors Influencing the Electrical and Optical Properties of Aigan Layers on Sapphire
1996
Mechanisms of Fermi level pinning in Schottky barriers on InGaAsSb and AlGaAsSb
1993
Electrical properties of MBE grown layers of AlGaAsSb and the effects of proton implantation and hydrogen plasma treatment
1993
Studies of defects in Mg doped p-GaN films grown by hydride vapor phase epitaxy on SiC substrates
2001
Optical and electrical properties of GaMnN films grown by molecular-beam epitaxy
2002
Electrical properties of undoped bulk ZnO substrates
2006
Electrical characteristics of Au and Ag Schottky contacts on n-ZnO
2003
Properties of Si donors and persistent photoconductivity in AlGaN
1998
Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films
1998
Band offsets in heterojunctions of InGaAsSb/AlGaAsSb
1995
New type of defects related to nonuniform distribution of compensating centers in p-GaN films
2003
Growth of AlBN solid solutions by organometallic vapor-phase epitaxy
1997
Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy
1998
Fermi level dependence of hydrogen diffusivity in GaN
2001
Trap states in multication mesoscopic perovskite solar cells: A deep levels transient spectroscopy investigation
2018
High Resistivity AlxGa1−xN Layers Grown by MOCVD
1996
Radiation effects in GaN materials and devices
2012
Misfit dislocations at the GaN/SiC interface and their interaction with point defects
2000
Magnetic and structural characterization of Mn-implanted, single-crystal ZnGeSiN2
2002
Conduction band offsets in InGaAlP/InGaP heterojunctions as measured by DLTS
1996
High Resolution X-ray Diffraction Analysis of GaN-Based Heterostructures Grown by OMVPE
1996