Standout Papers

Description of the SiO2Si interface properties by means of very low frequency MOS capacitanc... 1971 2026 1989 2007 427
  1. Description of the SiO2Si interface properties by means of very low frequency MOS capacitance measurements (1971)
    R. Castagné, A. Vapaille Surface Science

Citation Impact

2 from Science/Nature 60 standout
Sub-graph 1 of 23

Citing Papers

Metal–support interactions in metal oxide-supported atomic, cluster, and nanoparticle catalysis
2024 Standout
Defect passivation in methylammonium/bromine free inverted perovskite solar cells using charge-modulated molecular bonding
2024 Standout
9 intermediate papers

Works of A. Vapaille being referenced

Study of metal-semiconductor interface states using Schottky capacitance spectroscopy
1983
Interface states in a cleaved metal-silicon junction
1979
and 2 more

Author Peers

Author EEE AMPO Materials Chemistry Last Decade Papers Cites
A. Vapaille 773 571 189 16 814
D. Díaz-Fraile 1 3 30
I Sonkodi 13 320
T. Ui 17 462
Mo Shing Cheung 2 8 12 213
C.R. Tomachuk 198 7 307 27 391

All Works

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2026