Citation Impact
Citing Papers
A GaN bulk crystal with improved structural quality grown by the ammonothermal method
2007 StandoutNobel
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Mixed Transition‐Metal Oxides: Design, Synthesis, and Energy‐Related Applications
2014 Standout
Resonantly enhanced selective photochemical etching of GaN
2009
Growth and applications of Group III-nitrides
1998
Photonic crystal laser lift-off GaN light-emitting diodes
2006 StandoutNobel
Nonpolar III-nitride vertical-cavity surface emitting lasers with a polarization ratio of 100% fabricated using photoelectrochemical etching
2014 StandoutNobel
The influence of band offsets on the IV characteristics for GaN/SiC heterojunctions
2002 StandoutNobel
Dopant-selective photoenhanced wet etching of GaN
1998
Electrical, structural and microstructural characteristics of as-deposited and annealed Pt and Au contacts on chemical-vapor-cleaned GaN thin films
2002 StandoutNobel
Metalorganic vapor phase epitaxy growth of crack-free AlN on GaN and its application to high-mobility AlN/GaN superlattices
2001 StandoutNobel
Chlorine-Based Dry Etching of III/V Compound Semiconductors for Optoelectronic Application
1998 StandoutNobel
Transient ballistic transport in GaN
1997
GaN And Related Materials For High Power Applications
1997
Electrical properties of strained AlN/GaN superlattices on GaN grown by metalorganic vapor phase epitaxy
2002 StandoutNobel
Quantum ground state and single-phonon control of a mechanical resonator
2010 StandoutNatureNobel
Insulating GaN:Zn layers grown by hydride vapor phase epitaxy on SiC substrates
1999
Direct water photoelectrolysis with patterned n-GaN
2007 StandoutNobel
Luminescence properties of defects in GaN
2005 Standout
Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effect
1998 StandoutNobel
Ga-doping effects on electrical and luminescent properties of ZnO:(La,Eu)OF red phosphor thin films
2003 StandoutNobel
Removal of thick (>100nm) InGaN layers for optical devices using band-gap-selective photoelectrochemical etching
2004 StandoutNobel
A comprehensive review of ZnO materials and devices
2005 Standout
Semiconductor ultraviolet detectors
1996
Electron transport in AlGaN–GaN heterostructures grown on 6H–SiC substrates
1998
Lattice and energy band engineering in AlInGaN/GaN heterostructures
2000
Highly anisotropic photoenhanced wet etching of n-type GaN
1997
Comprehensive characterization of hydride VPE grown GaN layers and templates
2001
Wet etching of GaN, AlN, and SiC: a review
2005
Visible resonant modes in GaN-based photonic crystal membrane cavities
2006 StandoutNobel
A study of the electrical characteristics of various metals on p-type GaN for ohmic contacts
1999
Hot electron transport in AlN
2000 StandoutNobel
Surface recombination and sulfide passivation of GaN
2000
Highly anisotropic, ultra-smooth patterning of GaN/SiC by low energy electron enhanced etching in DC plasma
1997 StandoutNobel
Pd growth and subsequent Schottky barrier formation on chemical vapor cleaned p-type GaN surfaces
2002 StandoutNobel
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Free-standing, optically pumped, GaN∕InGaN microdisk lasers fabricated by photoelectrochemical etching
2004 StandoutNobel
Vertically oriented GaN-based air-gap distributed Bragg reflector structure fabricated using band-gap-selective photoelectrochemical etching
2005 StandoutNobel
Chemical, electrical, and structural properties of Ni/Au contacts on chemical vapor cleaned p-type GaN
2002 StandoutNobel
A review of the metal–GaN contact technology
1998
Transient electron transport in wurtzite GaN, InN, and AlN
1999
Yellow luminescence and Fermi level pinning in GaN layers
2000
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Probing the AlxGa1−xN spatial alloy fluctuation via UV-photoluminescence and Raman at submicron scale
2002 StandoutNobel
Chlorine-Based Plasma Etching of GaN
1996
Room-temperature continuous-wave lasing in GaN/InGaN microdisks
2006 StandoutNobel
Ohmic contacts formed by electrodeposition and physical vapor deposition on p-GaN
1998
Characterization of band bendings on Ga-face and N-face GaN films grown by metalorganic chemical-vapor deposition
2002
Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties
2014 StandoutNobel
Interfacial reaction and Fermi level movement induced by sequentially deposited metals on GaN: Au/Ni/GaN
2000
GaN: Processing, defects, and devices
1999
Calculated thermoelectric properties of InxGa1−xN, InxAl1−xN, and AlxGa1−xN
2013 StandoutNobel
Self-heating in high-power AlGaN-GaN HFETs
1998
The polarization field dependence of Ti/Al based Ohmic contacts on N-type semipolar GaN
2012 StandoutNobel
Critical issues for the growth of high-quality (Al,Ga)N/GaN and GaN/(In,Ga)N heterostructures on SiC(0001) by molecular-beam epitaxy
1999
Low-resistance Pt/Ni/Au ohmic contacts to p-type GaN
1999
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
1999 Standout
Hexagonal pyramid shaped light-emitting diodes based on ZnO and GaN direct wafer bonding
2006 StandoutNobel
Schottky barrier detectors on GaN for visible–blind ultraviolet detection
1997
Recombination dynamics of localized excitons in Al1−xInxN epitaxial films on GaN templates grown by metalorganic vapor phase epitaxy
2003 StandoutNobel
Ni and Ti Schottky barriers on n-AlGaN grown on SiC substrates
1998
Broad-area photoelectrochemical etching of GaN
1997
Thermally stable PtSi Schottky contact on n-GaN
1997
Gallium-nitride-based microcavity light-emitting diodes with air-gap distributed Bragg reflectors
2007 StandoutNobel
Advantages of AlN/GaN Metal Insulator Semiconductor Field Effect Transistor using Wet Chemical Etching with Hot Phosphoric Acid
2001 StandoutNobel
Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off
1999
Highly low resistance and transparent Ni/ZnO ohmic contacts to p-type GaN
2003
Melt-back etching of GaN
1997 StandoutNobel
Electrical effects of plasma damage in p-GaN
1999
Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO
2004
Investigation of surface treatments for nonalloyed ohmic contact formation in Ti/Al contacts to n-type GaN
2000
Group III nitride semiconductors for short wavelength light-emitting devices
1998
Smooth n-type GaN surfaces by photoenhanced wet etching
1998
Polarization charges and polarization-induced barriers in AlxGa1−xN/GaN and InyGa1−yN/GaN heterostructures
2001 StandoutNobel
Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures
2001
Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening
2004 StandoutNobel
Current transport mechanism of p-GaN Schottky contacts
2000
Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2000 StandoutNature
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
High-temperature performance of AlGaN/GaN HFETs on SiC substrates
1997
Spatial distributions of near-band-gap uv and yellow emission on MOCVD grown GaN epifilms
1998
Influence of crystal polarity on the properties of Pt/GaN Schottky diodes
2000
Growth of AlGaN on Si(111) by gas source molecular beam epitaxy
2000
Thermal reaction of Pt film with 〈110〉 GaN epilayer
1999
High-Detectivity GaN MSM Photodetectors with Low-Temperature GaN Cap Layers and Ir∕Pt Contact Electrodes
2007
Photoelectrochemical etching of p-type GaN heterostructures
2009 StandoutNobel
ZnO Nanowire UV Photodetectors with High Internal Gain
2007 Standout
Band structure nonlocal pseudopotential calculation of the III-nitride wurtzite phase materials system. Part II. Ternary alloys AlxGa1−xN, InxGa1−xN, and InxAl1−xN
2000
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
High rate and selective etching of GaN, AlGaN, and AlN using an inductively coupled plasma
1997 StandoutNobel
Smooth Top-Down Photoelectrochemical Etching of m-Plane GaN
2008
Radiative and nonradiative processes in strain-free AlxGa1−xN films studied by time-resolved photoluminescence and positron annihilation techniques
2004 StandoutNobel
Yellow luminescence depth profiling on GaN epifilms using reactive ion etching
1998
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of A. T. Ping being referenced
Dry etching of GaN using chemically assisted Ion beam etching with HCI and H2/Cl2
1996
Gate recessing of GaN MESFETs using photoelectrochemicalwet etching
1999
Study of chemically assisted ion beam etching of GaN using HCl gas
1995
AlGaN-GaN heterostructure FETs with offset gatedesign
1997
Schottky barrier properties of various metals on n-type GaN
1996
Reactive ion etching of gallium nitride usinghydrogen bromide plasmas
1994
Dry etching of using chemically assisted ion beam etching
1997
Dependence of DC and RF characteristics on gatelength for high currentAlGaN/GaN HFETs
1997
Metal contacts to n-type GaN
1998
Characterization of reactive ion etching-induced damage to n-GaN surfaces using schottky diodes
1997
Characterisation of Pd Schottky barrier on n -typeGaN
1996
High-power microwave 0.25-μm gate doped-channel GaN/AlGaN heterostructure field effect transistor
1998
The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN
1998
Chemically assisted ion beam etching of gallium nitride
1995
DC and microwave performance of high-current AlGaN/GaN heterostructure field effect transistors grown on p-type SiC substrates
1998
Low-frequency noise in AlGaN-GaN doped-channel heterostructurefield effect transistors grown on insulating SiC substrates
1998
High temperature characteristics of Pd Schottkycontacts on n -type GaN
1996
High transconductance AlGaN/GaN heterostructurefield effect transistors on SiC substrates
1997
Low resistance Ti/Pt/Au ohmic contacts to p-type GaN
2000
Ohmic contacts to n-type GaN using Pd/Al metallization
1996
Microwave performance of 0.25 µm doped channelGaN/AlGaN heterostructure field effect transistor at elevated temperatures
1997
Characteristics of chemically assisted ion beam etching of gallium nitride
1994