Citation Impact
Citing Papers
Alternative Plasmonic Materials: Beyond Gold and Silver
2013 Standout
Evidence for Two Mg Related Acceptors in GaN
2009 StandoutNobel
Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors
2006 StandoutNobel
Photonic crystal laser lift-off GaN light-emitting diodes
2006 StandoutNobel
Interaction of hydrogen with nitrogen interstitials in wurtzite GaN
2001
Structural and Electroluminescence Characteristics of Nonpolar Light-Emitting Diodes Fabricated on Lateral Epitaxially Overgrown a-Plane GaN
2006 StandoutNobel
Limiting factors of room-temperature nonradiative photoluminescence lifetime in polar and nonpolar GaN studied by time-resolved photoluminescence and slow positron annihilation techniques
2005 StandoutNobel
Large-Area MOCVD Growth of Ga2O3 in a Rotating Disc Reactor
2014
A review of Ga2O3 materials, processing, and devices
2018 Standout
Luminescence properties of defects in GaN
2005 Standout
Impact of Point Defects on the Luminescence Properties of (Al,Ga)N
2008 StandoutNobel
Resonant Raman and FTIR spectra of carbon doped GaN
2014 StandoutNobel
Interaction of hydrogen with gallium vacancies in wurtzite GaN
2001
Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution
2006 StandoutNobel
Myocardial Fatty Acid Metabolism in Health and Disease
2010 Standout
Waveguide study and refractive indices of GaN:Mg epitaxial film
1996
The emergence and prospects of deep-ultraviolet light-emitting diode technologies
2019 StandoutNobel
MBE growth and characterization of magnesium-doped gallium nitride
1998
On the incorporation of Mg and the role of oxygen, silicon, and hydrogen in GaN prepared by reactive molecular beam epitaxy
1997
Ga-related defect in as-grown Zn-doped GaN: An optically detected magnetic resonance study
2000 StandoutNobel
Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates
2005 StandoutNobel
Etching of Ga-face and N-face GaN by Inductively Coupled Plasma
2006 StandoutNobel
Anisotropic strain and phonon deformation potentials in GaN
2007 StandoutNobel
AlGaN/GaN HEMTs-an overview of device operation and applications
2002 Standout
Effects of low energy e‐beam irradiation on cathodoluminescence from GaN
2012 StandoutNobel
Origin of localized excitons in In-containing three-dimensional bulk (Al,In,Ga)N alloy films probed by time-resolved photoluminescence and monoenergetic positron annihilation techniques
2007 StandoutNobel
Temperature dependence of energy gap in GaN thin film studied by thermomodulation
1997
Diffusion, release, and uptake of hydrogen in magnesium-doped gallium nitride: Theory and experiment
2001
Simultaneous observation of luminescence and dissociation processes of Mg–H complex for Mg-doped GaN
2002 StandoutNobel
Electrical and structural analysis of high-dose Si implantation in GaN
1997
Band parameters for III–V compound semiconductors and their alloys
2001 Standout
Piezoelectric Franz–Keldysh effect in strained GaInN/GaN heterostructures
1999 StandoutNobel
Photonic bands in two-dimensionally patterned multimode GaN waveguides for light extraction
2005 StandoutNobel
GaN: Processing, defects, and devices
1999
Nonpolar m-Plane Blue-Light-Emitting Diode Lamps with Output Power of 23.5 mW under Pulsed Operation
2006 StandoutNobel
Phonon mode behavior in strained wurtziteAl N ∕ Ga N
2005 StandoutNobel
Demonstration of Nonpolar m-Plane InGaN/GaN Light-Emitting Diodes on Free-Standing m-Plane GaN Substrates
2005 StandoutNobel
Lattice site location studies of ion implanted Li8 in GaN
1998 StandoutNobel
Dependence of the luminescence energy in InGaN quantum-well structures on applied biaxial strain
2000 StandoutNobel
Free-carrier and phonon properties ofn- andp-type hexagonal GaN films measured by infrared ellipsometry
2000
Equilibrium state of hydrogen in gallium nitride: Theory and experiment
2000
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
1999 StandoutNobel
Band parameters for nitrogen-containing semiconductors
2003 Standout
First-principles calculations for defects and impurities: Applications to III-nitrides
2004 Standout
Ion implanted dopants in GaN and AlN: Lattice sites, annealing behavior, and defect recovery
2000 StandoutNobel
Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
2004 StandoutNobel
Works of A. Gurary being referenced
High Quality P‐Type GaN Deposition on c‐Sapphire Substrates in a Multiwafer Rotating‐Disk Reactor
1995
Design and operating characteristics of a metalorganic vapor phase epitaxy production scale, vertical, high speed, rotating disk reactor
1994
Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor
1995