A. Constant

Accident tolerant fuels for LWRs: A perspective

A review of Ga2O3 materials, processing, and devices

Novel activation process for Mg-implanted GaN

Novel Vertical Heterojunction Field-Effect Transistors with Re-grown AlGaN/GaN Two-Dimensional Electron Gas Channels on GaN Substrates

Ohmic contacts to Gallium Nitride materials

A Survey of Wide Bandgap Power Semiconductor Devices

Synopsis and outcome of the QUENCH experimental program

Schottky versus bipolar 3.3 kV SiC diodes

Investigation on boron carbide oxidation for nuclear reactor safety: Experiments in highly oxidising conditions

GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling

Effects of cap layer on ohmic Ti/Al contacts to Si+ implanted GaN