Phase-change heterostructure enables ultralow noise and drift for memory operation

328 indexed citations

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This paper, published in 2019, received 328 indexed citations. Written by Keyuan Ding, Jiangjing Wang, Yuxing Zhou, He Tian, Lu Lu, Riccardo Mazzarello, Chun‐Lin Jia, Wei Zhang, Feng Rao and E. Ma covering the research area of Materials Chemistry, Electrical and Electronic Engineering and Artificial Intelligence. It is primarily cited by scholars working on Electrical and Electronic Engineering (297 citations), Materials Chemistry (253 citations) and Polymers and Plastics (95 citations). Published in Science.

Countries where authors are citing Phase-change heterostructure enables ultralow noise and drift for memory operation

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Fields of papers citing Phase-change heterostructure enables ultralow noise and drift for memory operation

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Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of Phase-change heterostructure enables ultralow noise and drift for memory operation. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the Phase-change heterostructure enables ultralow noise and drift for memory operation.

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This paper is also available at doi.org/10.1126/science.aay0291.

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