Band-structure engineering for low-threshold high-efficiency semiconductor lasers
- Authors
- A.R. Adams
- Journal
- Electronics Letters
In The Last Decade
doi.org/10.1049/el:19860171 →Countries where authors are citing Band-structure engineering for low-threshold high-efficiency semiconductor lasers
This map shows the geographic impact of Band-structure engineering for low-threshold high-efficiency semiconductor lasers. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Band-structure engineering for low-threshold high-efficiency semiconductor lasers with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Band-structure engineering for low-threshold high-efficiency semiconductor lasers more than expected).
Fields of papers citing Band-structure engineering for low-threshold high-efficiency semiconductor lasers
This network shows the impact of Band-structure engineering for low-threshold high-efficiency semiconductor lasers. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the Band-structure engineering for low-threshold high-efficiency semiconductor lasers.
About Band-structure engineering for low-threshold high-efficiency semiconductor lasers
This paper, published in 1986, received 407 indexed citations . Written by A.R. Adams covering the research area of Electrical and Electronic Engineering and Atomic and Molecular Physics, and Optics. It is primarily cited by scholars working on Atomic and Molecular Physics, and Optics (378 citations), Electrical and Electronic Engineering (368 citations) and Spectroscopy (82 citations). Published in Electronics Letters.
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This paper is also available at doi.org/10.1049/el:19860171.