High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
- Journal
- Nature Communications
In The Last Decade
doi.org/10.1038/ncomms2018 →Countries where authors are citing High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
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Fields of papers citing High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
This network shows the impact of High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals.
About High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
This paper, published in 2012, received 1.4k indexed citations . Written by Sunkook Kim, Aniruddha Konar, Wan-Sik Hwang, Jong Hak Lee, Jiyoul Lee, Jae-Hyun Yang, Changhoon Jung, Hyoungsub Kim, Ji‐Beom Yoo and Jae‐Young Choi covering the research area of Materials Chemistry and Electrical and Electronic Engineering. It is primarily cited by scholars working on Materials Chemistry (1.3k citations), Electrical and Electronic Engineering (728 citations) and Biomedical Engineering (287 citations). Published in Nature Communications.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.
This paper is also available at doi.org/10.1038/ncomms2018.