MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
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doi.org/10.1021/nl4043505 →Countries where authors are citing MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
This map shows the geographic impact of MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts more than expected).
Fields of papers citing MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts
This network shows the impact of MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the MoS2 P-type Transistors and Diodes Enabled by High Work Function MoOx Contacts.
Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.
This paper is also available at doi.org/10.1021/nl4043505.