Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

732 indexed citations
published 2012

Countries where authors are citing Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

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Fields of papers citing Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

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Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics.

About Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics

This paper, published in 2012, received 732 indexed citations . Written by Jiang Pu, Yohei Yomogida, Keng‐Ku Liu, Lain‐Jong Li, Yoshihiro Iwasa and Taishi Takenobu covering the research area of Materials Chemistry and Biomedical Engineering. It is primarily cited by scholars working on Materials Chemistry (638 citations), Electrical and Electronic Engineering (344 citations) and Biomedical Engineering (186 citations). Published in Nano Letters.

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

This paper is also available at doi.org/10.1021/nl301335q.

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