Formation of High-Quality I−III−VI Semiconductor Nanocrystals by Tuning Relative Reactivity of Cationic Precursors
- Authors
- Renguo XieXiaogang Peng
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About Formation of High-Quality I−III−VI Semiconductor Nanocrystals by Tuning Relative Reactivity of Cationic Precursors
This paper, published in 2009, received 715 indexed citations . Written by Renguo Xie and Xiaogang Peng covering the research area of Materials Chemistry and Electrical and Electronic Engineering. It is primarily cited by scholars working on Materials Chemistry (686 citations), Electrical and Electronic Engineering (557 citations) and Renewable Energy, Sustainability and the Environment (96 citations). Published in Journal of the American Chemical Society.
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This paper is also available at doi.org/10.1021/ja9005767.