Võ Văn Ớn

527 total citations
54 papers, 378 citations indexed

About

Võ Văn Ớn is a scholar working on Materials Chemistry, Electrical and Electronic Engineering and Electronic, Optical and Magnetic Materials. According to data from OpenAlex, Võ Văn Ớn has authored 54 papers receiving a total of 378 indexed citations (citations by other indexed papers that have themselves been cited), including 47 papers in Materials Chemistry, 18 papers in Electrical and Electronic Engineering and 7 papers in Electronic, Optical and Magnetic Materials. Recurrent topics in Võ Văn Ớn's work include 2D Materials and Applications (35 papers), MXene and MAX Phase Materials (22 papers) and Graphene research and applications (18 papers). Võ Văn Ớn is often cited by papers focused on 2D Materials and Applications (35 papers), MXene and MAX Phase Materials (22 papers) and Graphene research and applications (18 papers). Võ Văn Ớn collaborates with scholars based in Vietnam, Mexico and China. Võ Văn Ớn's co-authors include D.M. Hoat, J.F. Rivas‐Silva, Duy Khanh Nguyen, Gregorio H. Cocoletzi, J. Guerrero-Sánchez, R. Ponce‐Pérez, Tuan V. Vu, Mosayeb Naseri, Viorel Chihaia and Nguyễn Thành Tiên and has published in prestigious journals such as SHILAP Revista de lepidopterología, Physical Chemistry Chemical Physics and Applied Surface Science.

In The Last Decade

Võ Văn Ớn

45 papers receiving 371 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
Võ Văn Ớn Vietnam 13 327 115 52 40 37 54 378
Dongliang Yang China 10 196 0.6× 89 0.8× 49 0.9× 39 1.0× 23 0.6× 40 300
Thomas Farmer United States 7 212 0.6× 60 0.5× 59 1.1× 37 0.9× 40 1.1× 12 320
Jason Baker United States 9 264 0.8× 128 1.1× 75 1.4× 20 0.5× 16 0.4× 21 341
Wenya Zhao China 9 238 0.7× 217 1.9× 72 1.4× 35 0.9× 13 0.4× 26 383
Saroj Thapa United States 14 400 1.2× 403 3.5× 42 0.8× 71 1.8× 21 0.6× 19 504
Davide Curcio Denmark 12 279 0.9× 108 0.9× 61 1.2× 133 3.3× 26 0.7× 26 418
Giada Franceschi Austria 11 222 0.7× 67 0.6× 71 1.4× 29 0.7× 72 1.9× 23 294
Rik S. Koster Netherlands 10 279 0.9× 120 1.0× 62 1.2× 79 2.0× 35 0.9× 10 351
M. Bouazaoui France 10 287 0.9× 204 1.8× 18 0.3× 85 2.1× 50 1.4× 20 406
Petr Levinský Czechia 12 356 1.1× 243 2.1× 97 1.9× 31 0.8× 24 0.6× 47 418

Countries citing papers authored by Võ Văn Ớn

Since Specialization
Citations

This map shows the geographic impact of Võ Văn Ớn's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by Võ Văn Ớn with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites Võ Văn Ớn more than expected).

Fields of papers citing papers by Võ Văn Ớn

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by Võ Văn Ớn. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by Võ Văn Ớn. The network helps show where Võ Văn Ớn may publish in the future.

Co-authorship network of co-authors of Võ Văn Ớn

This figure shows the co-authorship network connecting the top 25 collaborators of Võ Văn Ớn. A scholar is included among the top collaborators of Võ Văn Ớn based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with Võ Văn Ớn. Võ Văn Ớn is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

20 of 20 papers shown
1.
Ớn, Võ Văn, et al.. (2025). A systematic study of GaSe monolayer doped/codoped with transition metals (Mn and Fe) and pnictogen atoms (P and As). Journal of Magnetism and Magnetic Materials. 621. 172920–172920.
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Ớn, Võ Văn, et al.. (2024). Synergistic effects of vacancy and doping at Ge sublattices on the electronic and magnetic properties of new Janus Ge2PAs monolayer. Materials Science in Semiconductor Processing. 184. 108826–108826. 1 indexed citations
5.
Ớn, Võ Văn, et al.. (2024). Electronic and magnetic properties of GeS monolayer effected by point defects and doping. RSC Advances. 14(4). 2481–2490. 14 indexed citations
6.
Hoat, D.M., et al.. (2024). Realizing new 2D spintronic materials from the non-magnetic 1T-PdO2 monolayer through vacancy defects and doping. RSC Advances. 14(10). 7241–7250. 3 indexed citations
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Ớn, Võ Văn, R. Ponce‐Pérez, Chu Viet Ha, J. Guerrero-Sánchez, & D.M. Hoat. (2024). Inducing d 0 magnetism in new SrCl2 monolayer towards spintronic applications. Physica Scripta. 99(6). 65947–65947.
9.
Ớn, Võ Văn, J. Guerrero-Sánchez, & D.M. Hoat. (2023). Tuning the electronic and magnetic properties of MgO monolayer by nonmetal doping: A first-principles investigation. Materials Today Communications. 34. 105422–105422. 3 indexed citations
10.
Ớn, Võ Văn, J.F. Rivas‐Silva, Gregorio H. Cocoletzi, J. Guerrero-Sánchez, & D.M. Hoat. (2023). Feature-rich electronic and magnetic properties in silicene monolayer induced by nitrogenation: A first-principles study. Chemical Physics. 568. 111844–111844. 1 indexed citations
11.
Ớn, Võ Văn, J. Guerrero-Sánchez, & D.M. Hoat. (2023). Effects of transition metals and earth alkaline metals in the ionic honeycomb monolayer sodium bromide towards spintronic applications. Materials Advances. 5(2). 584–592. 2 indexed citations
12.
Ớn, Võ Văn, et al.. (2023). Functionalization of boron phosphide monolayers for spintronic applications by doping with alkali and alkaline earth metals. Journal of Physics D Applied Physics. 57(13). 135310–135310. 1 indexed citations
13.
Ớn, Võ Văn, et al.. (2022). General one-loop formulas for $$H\rightarrow f\bar{f}\gamma $$ H → f f ¯ γ and its applications. SHILAP Revista de lepidopterología. 8 indexed citations
14.
Hoat, D.M., Duy Khanh Nguyen, J. Guerrero-Sánchez, et al.. (2021). Nitrogen doping and oxygen vacancy effects on the fundamental properties of BeO monolayer: a DFT study. Journal of Physics Condensed Matter. 33(32). 325305–325305. 16 indexed citations
15.
Hoat, D.M., Duy Khanh Nguyen, A. Bafekry, et al.. (2021). Developing feature-rich electronic and magnetic properties in the β -As monolayer for spintronic and optoelectronic applications by C and Si doping: A first-principles study. Surfaces and Interfaces. 27. 101534–101534. 1 indexed citations
16.
Ớn, Võ Văn, J. Guerrero-Sánchez, R. Ponce‐Pérez, et al.. (2021). First‐principles investigation of the (HfSe2)4−n–(HfSSe)n (n = 0, 1, 2, 3, 4) lateral heterostructures. International Journal of Quantum Chemistry. 122(6). 2 indexed citations
17.
Ớn, Võ Văn, et al.. (2020). DFT Study on Adsorption of Acetone and Toluene on Silicene. VNU Journal of Science: Natural Sciences and Technology (Vietnam National University). 36(1). 5 indexed citations
18.
Hoat, D.M., Võ Văn Ớn, Duy Khanh Nguyen, et al.. (2020). Structural, electronic and optical properties of pristine and functionalized MgO monolayers: a first principles study. RSC Advances. 10(66). 40411–40420. 30 indexed citations
19.
Ớn, Võ Văn, D.M. Hoat, Duy Khanh Nguyen, et al.. (2020). Fluorinating the graphene-like BeO monolayer: A spin-polarized first principles study of the electronic, magnetic and optical properties. Physica Scripta. 95(10). 105806–105806. 16 indexed citations
20.
Ớn, Võ Văn, et al.. (2015). Some Scenarios of Cosmological Revolution in Polynomial - Exponential f(R) Modified Theory of Gravity. Chinese Journal of Physics. 53(3).

Rankless uses publication and citation data sourced from OpenAlex, an open and comprehensive bibliographic database. While OpenAlex provides broad and valuable coverage of the global research landscape, it—like all bibliographic datasets—has inherent limitations. These include incomplete records, variations in author disambiguation, differences in journal indexing, and delays in data updates. As a result, some metrics and network relationships displayed in Rankless may not fully capture the entirety of a scholar's output or impact.

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