V. Avanzini

405 total citations
18 papers, 320 citations indexed

About

V. Avanzini is a scholar working on Atomic and Molecular Physics, and Optics, Electrical and Electronic Engineering and Materials Chemistry. According to data from OpenAlex, V. Avanzini has authored 18 papers receiving a total of 320 indexed citations (citations by other indexed papers that have themselves been cited), including 15 papers in Atomic and Molecular Physics, and Optics, 15 papers in Electrical and Electronic Engineering and 10 papers in Materials Chemistry. Recurrent topics in V. Avanzini's work include Semiconductor Quantum Structures and Devices (13 papers), Quantum Dots Synthesis And Properties (9 papers) and Advanced Semiconductor Detectors and Materials (7 papers). V. Avanzini is often cited by papers focused on Semiconductor Quantum Structures and Devices (13 papers), Quantum Dots Synthesis And Properties (9 papers) and Advanced Semiconductor Detectors and Materials (7 papers). V. Avanzini collaborates with scholars based in Italy, Czechia and Switzerland. V. Avanzini's co-authors include P. Allegri, P. Frigeri, S. Franchi, A. Bosacchi, L. Seravalli, M. Minelli, Stefano Franchi, A. Baraldi, Carlo Ghezzi and R. Magnanini and has published in prestigious journals such as Applied Physics Letters, Materials Science and Engineering C and Journal of Crystal Growth.

In The Last Decade

V. Avanzini

18 papers receiving 305 citations

Peers — A (Enhanced Table)

Peers by citation overlap · career bar shows stage (early→late) cites · hero ref

Name h Career Trend Papers Cites
V. Avanzini Italy 10 290 267 151 43 21 18 320
G. Kudlek Germany 10 322 1.1× 304 1.1× 262 1.7× 31 0.7× 24 1.1× 23 392
S.K. Chang South Korea 10 282 1.0× 288 1.1× 233 1.5× 38 0.9× 18 0.9× 33 385
Ru-Shang Hsiao Taiwan 13 325 1.1× 320 1.2× 84 0.6× 50 1.2× 20 1.0× 44 354
Ch. Ribbat Germany 7 345 1.2× 332 1.2× 99 0.7× 21 0.5× 19 0.9× 8 370
N. C. Giles‐Taylor United States 11 284 1.0× 366 1.4× 213 1.4× 24 0.6× 11 0.5× 13 423
B. Kuhn-Heinrich Germany 10 303 1.0× 201 0.8× 151 1.0× 35 0.8× 7 0.3× 19 340
K.-H. Goetz Germany 5 300 1.0× 268 1.0× 92 0.6× 24 0.6× 36 1.7× 8 335
D.M. Symons United Kingdom 13 363 1.3× 239 0.9× 80 0.5× 48 1.1× 21 1.0× 30 382
L. Aina United States 10 309 1.1× 303 1.1× 45 0.3× 29 0.7× 36 1.7× 31 334
L. Müller‐Kirsch Germany 11 518 1.8× 407 1.5× 263 1.7× 40 0.9× 67 3.2× 16 536

Countries citing papers authored by V. Avanzini

Since Specialization
Citations

This map shows the geographic impact of V. Avanzini's research. It shows the number of citations coming from papers published by authors working in each country. You can also color the map by specialization and compare the number of citations received by V. Avanzini with the expected number of citations based on a country's size and research output (numbers larger than one mean the country cites V. Avanzini more than expected).

Fields of papers citing papers by V. Avanzini

Since Specialization
Physical SciencesHealth SciencesLife SciencesSocial Sciences

This network shows the impact of papers produced by V. Avanzini. Nodes represent research fields, and links connect fields that are likely to share authors. Colored nodes show fields that tend to cite the papers produced by V. Avanzini. The network helps show where V. Avanzini may publish in the future.

Co-authorship network of co-authors of V. Avanzini

This figure shows the co-authorship network connecting the top 25 collaborators of V. Avanzini. A scholar is included among the top collaborators of V. Avanzini based on the total number of citations received by their joint publications. Widths of edges represent the number of papers authors have co-authored together. Node borders signify the number of papers an author published with V. Avanzini. V. Avanzini is excluded from the visualization to improve readability, since they are connected to all nodes in the network.

All Works

18 of 18 papers shown
1.
Trevisi, Giovanna, P. Frigeri, M. Minelli, et al.. (2007). Optical and morphological properties of InGaAs/AlGaAs self-assembled quantum dot nanostructures for 980 nm room temperature emission. Optoelectronics Letters. 3(3). 161–164. 1 indexed citations
2.
Seravalli, L., P. Frigeri, P. Allegri, V. Avanzini, & S. Franchi. (2006). Metamorphic quantum dot nanostructures for long wavelength operation with enhanced emission efficiency. Materials Science and Engineering C. 27(5-8). 1046–1051. 6 indexed citations
3.
Seravalli, L., P. Frigeri, M. Minelli, et al.. (2005). Quantum dot strain engineering for light emission at 1.3, 1.4 and 1.5μm. Applied Physics Letters. 87(6). 41 indexed citations
4.
Seravalli, L., P. Frigeri, M. Minelli, et al.. (2005). Metamorphic self-assembled quantum dot nanostructures. Materials Science and Engineering C. 26(5-7). 731–734. 5 indexed citations
5.
Seravalli, L., M. Minelli, P. Frigeri, et al.. (2003). The effect of strain on tuning of light emission energy of InAs/InGaAs quantum-dot nanostructures. Applied Physics Letters. 82(14). 2341–2343. 73 indexed citations
6.
Frigeri, P., A. Bosacchi, Stefano Franchi, P. Allegri, & V. Avanzini. (1999). Vertically stacked quantum dots grown by ALMBE and MBE. Journal of Crystal Growth. 201-202. 1136–1138. 23 indexed citations
7.
Bosacchi, A., S. Franchi, P. Allegri, et al.. (1999). Composition control of GaSbAs alloys. Journal of Crystal Growth. 201-202. 858–860. 18 indexed citations
8.
Bosacchi, A., P. Frigeri, Stefano Franchi, P. Allegri, & V. Avanzini. (1997). self-assembled quantum dots grown by ALMBE and MBE. Journal of Crystal Growth. 175-176. 771–776. 53 indexed citations
9.
Bosacchi, A., S. Franchi, P. Allegri, et al.. (1995). Electrical and photoluminescence properties of undoped GaSb prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy. Journal of Crystal Growth. 150. 844–848. 28 indexed citations
10.
Bosacchi, A., et al.. (1995). Indium surface segregation in InGaAs-based structures prepared by molecular beam epitaxy and atomic layer molecular beam epitaxy. Journal of Crystal Growth. 150. 185–189. 13 indexed citations
11.
Baraldi, A., Carlo Ghezzi, R. Magnanini, et al.. (1994). Preparation of GaSb by molecular beam epitaxy and electrical and photoluminescence characterization. Materials Science and Engineering B. 28(1-3). 174–178. 21 indexed citations
12.
Bosacchi, A., et al.. (1994). Photoluminescence study of surface segregation of In in InGaAs-based structures grown by MBE and atomic layer MBE. Materials Science and Engineering B. 28(1-3). 469–473. 2 indexed citations
13.
Bosacchi, A., et al.. (1993). Study of ALMBE growth conditions for the preparation of compositionally graded AlGaAs/GaAs structures. Journal of Crystal Growth. 127(1-4). 270–273. 7 indexed citations
14.
Bosacchi, A., S. Franchi, E. Gombia, et al.. (1989). Hydrogenation of GaAs during MBE Growth. Materials science forum. 38-41. 1027–1032. 4 indexed citations
15.
Bosacchi, A., Stefano Franchi, E. Gombia, et al.. (1989). Effect of hydrogen implantation on shallow and deep levels in GaAs growth by molecular-beam epitaxy. Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena. 7(5). 1103–1105. 10 indexed citations
16.
Bosacchi, A., S. Franchi, Carlo Ghezzi, et al.. (1987). DLTS and photoluminescence of MBE GaAs grown in the presence of hydrogen. Journal of Crystal Growth. 81(1-4). 181–187. 11 indexed citations
17.
Bosacchi, A., S. Franchi, P. Allegri, V. Avanzini, & C. Frigeri. (1983). II–VI Semiconductor epilayers grown by mbe on III–V semiconductor substrates. Materials Chemistry and Physics. 9(1-3). 179–187. 2 indexed citations
18.
Bosacchi, A., S. Franchi, P. Allegri, & V. Avanzini. (1982). MBE evaporation source fitted with shutter and water-cooled jacket. Journal of Vacuum Science and Technology. 21(3). 897–898. 2 indexed citations

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